Single-sided cooling power module and methods of manufacturing are disclosed where the cooling power module includes a pattern formed on a direct bonded copper (DBC) substrate to conduct electricity, a power device chip disposed on the DBC substrate and electrically connected to the pattern, a power terminal coupled to the DBC substrate and electrically connected to the pattern, and a signal pin extending in a direction perpendicular to a surface of the DBC substrate and facing the power device chip, the signal pin being electrically connected to the pattern.

A light-emitting device includes first and second light-emitting elements, first and second support members, first and second protective elements, a first wiring with one end bonded to the first light-emitting element or the first support member, a second wiring with one end bonded to the first light-emitting element or the first support member and the other end bonded to the second light-emitting element or the second support member, a third wiring with one end bonded to the first protective element or the first support member and the other of end bonded to the second protective element or the second support member; and a fourth wiring with one end bonded to the first protective element or the first support member. The first and second light-emitting elements and the first and second protective elements are aligned. The third and fourth wiring do not pass directly above the first and second light-emitting elements.

A power module package structure includes a first substrate and a power component. The first substrate includes at least one conductive layer on a surface thereof. The power component includes a first chip and a first spacer. The first chip has at least one electrode. The first spacer in a heat dissipation space between the first substrate and the first chip includes an insulating heat dissipation layer in the heat dissipation space and multiple vertical conductive connectors, each of the vertical conductive connectors penetrates the insulating heat dissipation layer. The insulating heat dissipation layer surrounds the vertical conductive connectors and electrically isolates the vertical conductive connectors. The vertical conductive connector includes two opposite ends, one end electrically connected to the conductive layer, and the other end electrically connected to the electrode to form a conductive path and a heat dissipation path between the first chip and the first substrate.

A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. In a Y-direction, each of the first and second semiconductor chips is disposed at a position closer to the first side than to the second side, while the semiconductor chip is disposed at a position closer to the second side than to the first side. Also, in the Y-direction, the resistive component, the second semiconductor chips, and the first semiconductor chips are arranged in order of increasing distance from the third side toward the fourth side, while the semiconductor chip is disposed at a position closer to the third side than to the fourth side.

A semiconductor device includes a chip that has a main surface, a main surface electrode that covers the main surface, pillar electrodes that are arranged on the main surface electrode at an interval, a sealing insulator that covers a region between the pillar electrodes on the main surface electrode such as to expose parts of the pillar electrodes, and at least one terminal film that covers at least one of the pillar electrodes on the sealing insulator.

Provided here are: a board; a cavity region therein having an opening created on a front side of a central portion of the board; a back-side conductor that is formed for the board to provide a bottom portion of the cavity region; a semiconductor chip mounted on the back-side conductor; and a mold material that covers the semiconductor chip and the board; wherein the mold material has a portion on the front side of the board and a portion on the back side thereof that are interconnected through at least one hole provided in the board, thereby to prevent failures such as a deformation, a crack, etc. of the board; and to reduce the warpage of the board to prevent the mold material from being peeled off therefrom.

An IC module includes: a substrate that has a first surface and a second surface opposite the first surface and a metal surface at least on the first surface; and an IC chip with both a contact communication function and a contactless communication function, in which a plurality of terminals constituted by the metal surface is formed on the first surface of the substrate, the plurality of terminals containing a first terminal used for contact communication and a second terminal other than the first terminal, and the substrate includes a via formed on an inner surface of a through hole penetrating from the first surface to the second surface and is connected to the first terminal, a metal connection pad extending from the via to a portion, on the second surface, positioned opposite the second terminal overlapping the IC chip when seen from a thickness direction of the substrate.

A semiconductor device includes a semiconductor chip, a lead frame, and a bonding wire. The lead frame includes a base portion on which the semiconductor chip is mounted, a first lead separated from the base portion and electrically connected to the semiconductor chip, and a second lead separated from the base portion, and the bonding wire electrically connects the base portion to the second lead.

A microwave module includes an RF device and a multilayer resin substrate. The device includes a metal cover covering at least an internal circuit. The substrate includes a first end face on a side of the device, a second end face on a side opposite to the first end face, a signal through-holes surrounding the circuit and connected to the circuit, ground through-holes surrounding the signal through-holes and connected to the cover, a first surface ground provided on the first end face and connected to the cover, an inner layer surface ground connected to ground through-holes, and an RF transmission line surrounded by the ground through-holes, the first surface ground, and the inner layer surface ground, and connected to the signal through-hole.

A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. In a Y-direction, each of the first and second semiconductor chips is disposed at a position closer to the first side than to the second side, while the semiconductor chip is disposed at a position closer to the second side than to the first side. Also, in the Y-direction, the resistive component, the second semiconductor chips, and the first semiconductor chips are arranged in order of increasing distance from the third side toward the fourth side, while the semiconductor chip is disposed at a position closer to the third side than to the fourth side.