A semiconductor device includes: a semiconductor element having an element main surface and first and second electrodes arranged on the element main surface; a first lead mounting the semiconductor element thereon; a second lead electrically connected to the first electrode; a third lead electrically connected to the second electrode; first connecting portions bonded to the first electrode and the second lead; and a sealing resin covering the semiconductor element, wherein the sealing resin includes a resin main surface facing the same side as the element main surface and a resin side surface connected to the resin main surface, the second lead includes a portion exposed from the sealing resin, the third lead includes a portion exposed from the sealing resin, and the exposed portion of the second lead includes a portion located on a side of the resin main surface with respect to the exposed portion of the third lead.

A packaged power semiconductor device is provided. The packaged power semiconductor device may include: a direct bonded copper (DBC) substrate configured to include an upper surface in which an upper region, a middle region, and a lower region are defined; a metal tab formed to be directly connected to the upper surface in the upper region; a first lead formed to be directly connected to the upper surface in the lower region; and a semiconductor chip formed on the upper surface in the middle region.

An example semiconductor package includes a semiconductor die configured to detect a force. In addition, the semiconductor package includes a mold compound covering the semiconductor die. Further, the semiconductor package includes an engagement surface including a pattern of projections adapted to engage with a mounting surface on a member of interest.

A semiconductor device includes a semiconductor chip, a heat sink, a resin package, heat transfer material and multiple spacers. The heat sink absorbs heat of the semiconductor chip. The resin package accommodates the semiconductor chip, and the resin package has a surface at which the heat sink is disposed. The heat transfer material has fluidity, and the heat transfer material is filled between the heat sink and the cooling plate. The spacers are dispersedly arranged in the heat transfer material, and the spacers are in contact with the heat sink and the cooling plate.

Provided is a semiconductor module, including: a semiconductor chip; a terminal, configured to extend in a extending direction, and be connected electrically with the semiconductor chip; a sealing resin, configured to seal the semiconductor chip, and cover at least a part of an upper surface of the terminal and at least a part of a lower surface of the terminal; and a lower side resin, configured to extend in the extending direction from the sealing resin, and cover at least a part of the lower surface of the terminal, wherein in the extending direction, a length at which the sealing resin and the lower side resin cover the lower surface of the terminal is greater than a length at which the sealing resin covers the upper surface of the terminal in the extending direction; and wherein the sealing resin and the lower side resin are formed of a same material.

In a described example, an apparatus includes: a package substrate having a die pad configured for mounting a semiconductor die, and leads spaced from the die pad; a semiconductor die mounted on the die pad; a fuse mounted to a lead, the fuse having a fuse element coupled between a fuse cap and the lead, the fuse having a fuse body with an opening surrounding the fuse element, the fuse cap attached to the fuse body; electrical connections coupling the semiconductor die to the fuse; and mold compound covering the semiconductor die, the fuse, the electrical connections, and a portion of the package substrate, with portions of the leads exposed from the mold compound to form terminals.

There is provided a metal component used for manufacturing a semiconductor device, including: a base material having an electrical conductivity; a nickel layer formed on a surface of the base material and containing nickel as a main component; and a noble metal layer formed on a surface of the nickel layer. The nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus. According to the metal component of the present disclosure, a thickness of the nickel layer can be reduced while good characteristics can be maintained.

An integrated circuit package system includes a substrate, a plurality of leads, N semiconductor devices, N first heat sinks, an encapsulating body, a second heat sink and a plurality of heat-dissipating fins protruding upward from the second heat sink, where N is a natural number. The leads are formed on a lower surface of the substrate. Each of the semiconductor devices is attached on an upper surface of the substrate, and includes a plurality of bonding pads which each is electrically connected to the corresponding lead. Each first heat sink is thermally coupled to a first top surface of the corresponding semiconductor device. The encapsulating body is formed to cover the substrate, the N semiconductor devices and the N first heat sinks such that the leads are exposed. The second heat sink is mounted on the encapsulating body, and is thermally coupled to the N first heat sinks.

An electric drive module having a motor and an inverter that are disposed in a housing The motor includes a stator, which has a plurality of sets of windings. The inverter has a plurality of power semiconductors, which are mounted into a retaining member, an end plate, which is sealingly coupled to the retaining member, and an inlet port that extends through the end plate. Sets of the semiconductor devices are electrically coupled to corresponding sets of the windings. Power terminals on the semiconductor devices are coupled to a heat sink. Fins on the heat sinks extend into an annular region that is adjacent to axial ends of the windings. At least one of the retaining member and the end plate is sealingly coupled to the housing assembly. The inlet port, the annular region and cooling passages in the stator are coupled in fluid communication.

A semiconductor device forming a bidirectional switch includes first and second carriers, first and second semiconductor chips arranged on the first and second carriers, respectively, a first row of terminals arranged along a first side face of the carrier, a second row of terminals arranged along a second side face of the carrier opposite the first side face, and an encapsulation body encapsulating the first and second semiconductor chips. Each row of terminals includes a gate terminal, a sensing terminal and at least one power terminal of the bidirectional switch.