A power flat no-lead (FN) package is provided. The power FN package includes a die paddle; a die, disposed on the die paddle, operating at a radio frequency; a first lead, disposed by a first side of the die paddle, configured to receive an input signal of the power FN package; and a capacitor, disposed on the first lead; wherein a lead width of the first lead is greater than a half of a first side length of the first side.

A semiconductor device includes a ground plane, a capacitor disposed on the ground plane and having a first top surface, a semiconductor chip disposed on the ground plane and having a second top surface, a bonding wire connecting the first top surface and the second top surface, and a conductive member disposed on the ground plane. The conductive member is electrically connected to the ground plane. The bonding wire extends in a first direction in a planar view normal to the ground plane. The conductive member is positioned apart from the bonding wire in a second direction orthogonally intersecting in the planar view with the first direction.

A method of packaging a radio frequency (RF) transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

A radio frequency (RF) transistor amplifier includes a package submount. a package frame comprising an electrically insulating member and one or more conductive layers on the package submount and exposing a surface thereof, a transistor die on the surface of the package submount and comprising respective terminals that are electrically connected to the package frame, a protective member covering the transistor die, and one or more electrical components that are attached to the package frame outside the protective member. Related RF power device packages and fabrication methods are also discussed.

A semiconductor optical device includes: a laser for emitting light; a modulator for modulating the light using an electroabsorption effect; a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor, is electrically connected in series to the laser and the chip capacitor as a whole, and includes a first terminal and a second terminal; a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other; an electrical wiring group in which the laser, the modulator, the chip capacitor, and the chip inductor are electrically connected to each other; and a substrate on which the laser, the modulator, the chip capacitor, and the chip inductor are mounted.

A multi-chip isolation (ISO) device package includes a leadframe including leads, an interposer substrate including a top copper layer and a bottom metal layer, with a dielectric layer in-between. A first IC die and a second IC die include circuitry including a transmitter or a receiver, and first and second bond pads are both attached top side up in the package. A laminate transformer is attached to the top copper layer positioned lateral to the IC die. Bondwires wirebond the first bond pads to first pads on the laminate transformer and to a first group of the leads or the lead terminals, and bondwires wirebond the second bond pads to second pads on the laminate transformer and to a second group of the leads or the lead terminals. A mold compound provides encapsulation.

A transistor device structure may include a submount, a transistor device on the carrier submount, and a metal bonding layer between the submount and the transistor die, the metal bonding stack providing mechanical attachment of the transistor die to the submount. The metal bonding stack may include gold, tin and nickel. A weight percentage of a combination of nickel and tin in the metal bonding layer is greater than 50 percent and a weight percentage of gold in the metal bonding layer is less than 25 percent.

An electronic device includes a magnetic assembly with a multilevel lamination or metallization structure having a core layer, dielectric layers and conductive features formed in metal layers on or between the dielectric layers in respective planes of orthogonal first and second directions and stacked along an orthogonal third direction. The conductive features include first and second patterned conductive features forming first and second windings, first and second conductive capacitor plates, and first and second conductive field plates, in which the first conductive capacitor plate is between the first conductive field plate and the core layer along the third direction and the second conductive capacitor plate is between the second conductive field plate and the core layer along the third direction.

In embodiments, it is provided an integrated device for providing a measure of a quantity dependent on current through an electrical conductor, having: a sensing and processing sub-system; an electrical conductor to conduct a current; an insulating material encapsulating the sensing and processing sub-system and maintaining the electrical conductor in a fixed and spaced relationship to the sensing and processing sub-system, wherein the insulating material is configured to insulate the electrical conductor from the sensing and processing sub-system; sensing circuitry comprising a plurality of magnetic field sensing elements arranged on the sensing and processing sub-system adjacent to the electrical conductor, wherein the sensing circuitry is configured to provide a measure of the quantity as a weighted sum and/or difference of outputs of the magnetic field sensing elements caused by the current flowing through the electrical conductor adjacent to the plurality of magnetic field sensing elements; a voltage sensing input for sensing a measure of voltage associated with the current conductor; and output circuitry on the sensing and processing sub-system arranged to provide an output measure of the quantity from the sensed measure of current and sensed measure of voltage.

A method of packaging an RF transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.