A resonator device includes first and second resonators and an integrated circuit. The integrated circuit includes first and second oscillation circuits that oscillate first and second resonators, first and second terminals connected to the first oscillation circuit, and third and fourth terminals connected to the second oscillation circuit. The first terminal of the integrated circuit and one electrode of the first resonator are connected to each other via a bump. The third terminal and one electrode of the second resonator are connected to each other via a bump. In a plan view, at least a portion of the first resonator overlaps the first oscillation circuit and at least a portion of the second resonator overlaps the second oscillation circuit.

A semiconductor package structure comprises: a high-voltage depletion type semiconductor transistor comprising a source electrode, a gate electrode and a drain electrode; a low-voltage enhancement type semiconductor transistor comprising a source electrode, a gate electrode and a drain electrode; a shell comprising a cavity for receiving the high-voltage depletion type semiconductor transistor and the low-voltage enhancement type semiconductor transistor, and a high-voltage terminal, a first low-voltage terminal and a second low-voltage terminal; and cascade circuits comprising a supporting sheet having a conductive surface. The source electrode of the high-voltage depletion type transistor and the drain electrode of the low-voltage enhancement type semiconductor transistor are fixed to the conductive surface of the supporting sheet and electrically connected to each other through the conductive surface of the supporting sheet. A side of the supporting sheet away from the conductive surface is fixed to the cavity of the shell.

Disclosed herein is a method, including attaching a semiconductor chip to a chip mounting portion on at least one leadframe portion, and attaching a passive component on a passive component mounting portion of the at least one leadframe portion. The method further includes forming a laser direct structuring (LDS) activatable molding material over the semiconductor chip, passive component, and the at least one leadframe portion. Desired patterns of structured areas are formed within the LDS activatable molding material by activating the LDS activatable molding material. The desired patterns of structured areas are metallized to form conductive areas within the LDS activatable molding material to thereby form electrical connection between the semiconductor chip and the passive component. A passivation layer is formed on the LDS activatable molding material.

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180 (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

An inverter for an electric vehicle drive has a bridge including a plurality of power switching devices having respective insulated gate terminals and emitter terminals. A PWM circuit determines switching commands for controlling the bridge. A plurality of gate drivers receive the switching commands and provide gate drive signals to respective gate terminals. A plurality of gate capacitors are each thermally coupled to a respective switching device and are electrically connected between the respective gate and emitter terminals. Each gate capacitor has a negative temperature coefficient adapted to counter changes in a switching speed of the switching devices over a predetermined range of temperature. As a result, a consistent switching speed is maintained so that power loss and switching device reliability are optimal across the full temperature range.

Provided is an electronic package, including: a carrier, an electronic component disposed on the carrier, and an antenna structure, wherein the antenna structure has a plurality of spacing members and at least one wire connected among the spacing members. No additional layout area is required to be formed on a surface of the carrier, such that the objective of miniaturization can be achieved.

A signal isolator integrated circuit package includes a first die in a first voltage domain and a second die in a second voltage domain. The integrated circuit package also includes a first signal path from the first die to the second die via a first isolation barrier supported by the first die. The first isolation barrier includes a first conductive layer disposed over a surface of the first die and a first insulating layer disposed over the first conductive layer. The first isolation barrier also includes a second insulating layer disposed over the first insulating layer and a second conductive layer disposed over the second insulating layer. A first floating conductive plate is disposed between the first insulating layer and the second insulating layer.

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180 (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

A packaged semiconductor chip includes a power amplifier die including a semiconductor substrate, and an input contact pad, an output contact pad, first and second direct-current (DC) contact pads, one or more transistors having an input coupled to the input contact pad, and an input bias coupling path electrically coupling the first DC contact pad to the second DC contact pad and the input contact pad implemented on the semiconductor substrate. The chip further includes a lead frame having one or more radio-frequency input pins electrically coupled to the input contact pad, one or more radio-frequency output pins electrically coupled to the output contact pad, and first and second input bias pins electrically coupled to the first and second DC contact pads, respectively.

A method for encasing an electrical unit includes connecting the electrical unit to a leadframe and encasing the electrical unit with a first plastic material to form an inner molded body, so that a plurality of contacts of the electrical unit project from the inner molded body. The inner molded body is punched out of the lead frame. The method also includes connecting at least one first contact and one second contact to a shunt resistor. The inner molded body is encased with a second plastic material to form an outer molded body.