According to one embodiment, a semiconductor device includes a semiconductor chip having a first electrode on a first surface, a metal plate, and a first conductive bonding sheet that is disposed between the first surface of the semiconductor chip and the metal plate and bonds the first electrode to the metal plate.

The present disclosure relates to a semiconductor device including a first high electron mobility transistor (HEMT) device disposed within a semiconductor structure and having a first source, a first drain, and a first gate; a second HEMT device disposed within the semiconductor structure and having a second source, a second drain, and a second gate, the second source coupled to the first drain; and a diode-connected transistor device disposed within the semiconductor structure and comprising a third source, a third gate, and a third drain, the third drain coupled to the second gate.

A memory die including a three-dimensional array of memory elements and a logic die including a peripheral circuitry that support operation of the three-dimensional array of memory elements can be bonded by die-to-die bonding to provide a bonded assembly. External bonding pads for the bonded assembly can be provided by forming recess regions through the memory die or through the logic die to physically expose metal interconnect structures within interconnect-level dielectric layers. The external bonding pads can include, or can be formed upon, a physically exposed subset of the metal interconnect structures. Alternatively or additionally, laterally-insulated external connection via structures can be formed through the bonded assembly to multiple levels of the metal interconnect structures. Further, through-dielectric external connection via structures extending through a stepped dielectric material portion of the memory die can be physically exposed, and external bonding pads can be formed thereupon.

A semiconductor die having a metal tab connected thereto. The metal tab includes at least one slot on at least one side of the metal tab, wherein the at least one slot i) creates an opening between at least two portions of the metal tab and ii) exposes the semiconductor die in relation to the metal tab. The semiconductor die can be a silicon (Si) die and the metal tab can be a copper (Cu) tab, where the at least one slot includes at least four slots corresponding to each of at least four sides of the metal, and wherein with respect to each of the at least four sides, each corresponding slot i) creates an opening between at least two portions of the Cu metal tab and ii) exposes the Si semiconductor die in relation to the Cu metal tab.

A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

A semiconductor package includes a substrate and a semiconductor chip, a lower conductive layer and an upper conductive layer sequentially stacked on the substrate. The substrate includes first and second connection pads formed thereon. The semiconductor chip includes third and fourth connection pads formed thereon. The upper conductive layer is connected to the first and the third connection pads via a first and a second wiring, and the lower conductive layer is connected to the second and the fourth connection pads via a third and a fourth wiring.

A semiconductor package includes a substrate and a semiconductor chip, a lower conductive layer and an upper conductive layer sequentially stacked on the substrate. The substrate includes first and second connection pads formed thereon. The semiconductor chip includes third and fourth connection pads formed thereon. The upper conductive layer is connected to the first and the third connection pads via a first and a second wiring, and the lower conductive layer is connected to the second and the fourth connection pads via a third and a fourth wiring.

A semiconductor device according to the present disclosure includes a first semiconductor element; a first connecting member; and a first member. The first semiconductor element has a first element obverse surface and a first element reverse surface that face mutually opposite in a thickness direction. The first semiconductor element also has a first electrode disposed on the first element obverse surface. The first connecting member is electrically connected to the first electrode. The first member overlaps with the first electrode as viewed in the thickness direction, has a Vickers hardness lower than a Vickers hardness of the first connecting member, and has electroconductivity.

A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.

A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.