H01L2224/816

OPTICAL MODULE AND MANUFACTURING METHOD OF OPTICAL MODULE

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

OPTICAL MODULE AND MANUFACTURING METHOD OF OPTICAL MODULE

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

MOSFET with reduced resistance

A semiconductor device includes a semiconductor substrate including a doped region. A metal layer is formed on the doped region. An insulating layer covers the metal layer. The metal layer can serve as a buried metal layer which reduces electrical resistance between electrical charge in the doped region and adjacent contacts. The contacts can extend through the insulating layer between the buried metal layer and overlying metal stripes.

MOSFET with reduced resistance

A semiconductor device includes a semiconductor substrate including a doped region. A metal layer is formed on the doped region. An insulating layer covers the metal layer. The metal layer can serve as a buried metal layer which reduces electrical resistance between electrical charge in the doped region and adjacent contacts. The contacts can extend through the insulating layer between the buried metal layer and overlying metal stripes.

TRANSPARENT PANEL PROVIDED WITH LIGHT EMITTING FUNCTION

The present invention provides a panel capable of switching between a state transparent to external light, a point light emitting state, and a surface light emitting state. Provided is a transparent panel provided with light emitting function, including: an LED die; a light transmitting substrate for LED, on which the LED die is mounted; a wiring pattern provided on a surface of the light transmitting substrate for LED and bonded to the LED die; and a light diffusing panel laminated on the light transmitting substrate for LED. The light diffusing panel includes: a pair of light transmitting substrates for liquid crystal; a liquid crystal layer sandwiched between the pair of light transmitting substrates for liquid crystal; and transparent conductive films disposed on the light transmitting substrates for liquid crystal, and is switchable between a transparent state and a light diffusion state.

TRANSPARENT PANEL PROVIDED WITH LIGHT EMITTING FUNCTION

The present invention provides a panel capable of switching between a state transparent to external light, a point light emitting state, and a surface light emitting state. Provided is a transparent panel provided with light emitting function, including: an LED die; a light transmitting substrate for LED, on which the LED die is mounted; a wiring pattern provided on a surface of the light transmitting substrate for LED and bonded to the LED die; and a light diffusing panel laminated on the light transmitting substrate for LED. The light diffusing panel includes: a pair of light transmitting substrates for liquid crystal; a liquid crystal layer sandwiched between the pair of light transmitting substrates for liquid crystal; and transparent conductive films disposed on the light transmitting substrates for liquid crystal, and is switchable between a transparent state and a light diffusion state.

SEMICONDUCTOR DIE HAVING EDGE WITH MULTIPLE GRADIENTS AND METHOD FOR FORMING THE SAME

A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.

SEMICONDUCTOR DIE HAVING EDGE WITH MULTIPLE GRADIENTS AND METHOD FOR FORMING THE SAME

A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.

MODULE AND METHOD OF MANUFACTURING MODULE
20200118913 · 2020-04-16 ·

A module includes a substrate, a plurality of components on an upper surface of the substrate, a component on a lower surface of the substrate, solder balls on the lower surface, sealing resin layers stacked on the upper surface and the lower surface of the substrate, and a shield film covering a side surface and an upper surface of the module. Part of each solder ball is exposed from a surface of the sealing resin layer, and the exposed parts are shaped to protrude from the sealing resin layer. The module can be connected to a mother substrate by connecting the protruding parts of the solder balls. There are gaps between the solder balls and the sealing resin layer, and the occurrence of cracks in the solder balls can be suppressed by reducing stress arising from a difference in thermal expansion coefficient between the solder and the resin.

MODULE AND METHOD OF MANUFACTURING MODULE
20200118913 · 2020-04-16 ·

A module includes a substrate, a plurality of components on an upper surface of the substrate, a component on a lower surface of the substrate, solder balls on the lower surface, sealing resin layers stacked on the upper surface and the lower surface of the substrate, and a shield film covering a side surface and an upper surface of the module. Part of each solder ball is exposed from a surface of the sealing resin layer, and the exposed parts are shaped to protrude from the sealing resin layer. The module can be connected to a mother substrate by connecting the protruding parts of the solder balls. There are gaps between the solder balls and the sealing resin layer, and the occurrence of cracks in the solder balls can be suppressed by reducing stress arising from a difference in thermal expansion coefficient between the solder and the resin.