A thin film transistor panel according to an exemplary embodiment includes: a substrate; a first transistor disposed on the substrate and including a first semiconductor layer including a low temperature polysilicon and a first control electrode overlapping the first semiconductor layer; a second transistor disposed on the substrate and including a second semiconductor layer including an oxide semiconductor and a second control electrode overlapping the second semiconductor layer; a first gate insulation layer disposed between the first semiconductor layer and the first control electrode of the first transistor and including a first insulation layer and a second insulation layer; and a second gate insulation layer disposed between the second semiconductor layer and the second control electrode of the second transistor and including the second insulation layer, wherein the density of the first insulation layer may be higher than the density of the second insulation layer, the first semiconductor layer of the first transistor may be in contact with the first insulation layer, and the second semiconductor layer of the second transistor may be in contact with the second insulation layer.

An exemplary embodiment of the present disclosure provides a display device including: a substrate; a semiconductor layer disposed on the substrate; a first transistor including a first gate electrode disposed on the semiconductor layer; a light-emitting diode connected with the first transistor; and a first layer disposed between the substrate and the semiconductor layer, wherein the semiconductor layer includes a first electrode, a second electrode, and a channel disposed between the first electrode and the second electrode, the channel includes an impurity, and the first layer overlaps the first transistor.

A manufacturing apparatus and a manufacturing method are provided. A manufacturing apparatus includes a chamber, and a stage disposed in the chamber. The stage includes an upper surface on which a target substrate is disposed, a lower surface opposite to the upper surface, a first side surface extending between the upper surface and the lower surface in a first direction, and a second side surface extending between the upper surface and the lower surface in a second direction perpendicular to the first direction. The first side surface is in a round shape, and at least a portion of the first side surface is convex toward an outside of the stage.

This disclosure relates to the field of display technologies, and discloses a thin film transistor, a method for fabricating the same, a method for controlling the same, a display panel, and a display device. The thin film transistor includes: a base substrate, a semiconductor active layer on one side of the base substrate, a source electrically connected with one end of the semiconductor active layer, a drain electrically connected with the other end of the semiconductor active layer, a gate insulated from the semiconductor active layer, the source, and the drain, and a modulation electrode insulated from the semiconductor active layer, the gate, the source, and the drain. The modulation electrode is proximate to the drain, and an orthographic projection of the modulation electrode on the base substrate overlaps with an orthographic projection of the semiconductor active layer on the base substrate

A transistor substrate includes a substrate, a semiconductor layer overlapping the substrate, and a gate electrode overlapping the semiconductor layer. The semiconductor layer includes a channel unit, a conductive unit directly connected to an end of the channel unit, and an edge unit positioned at an edge of the conductive unit. A carbon concentration of the edge unit is higher than each of a carbon concentration of the channel unit and a carbon concentration of the conductive unit.

A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.

A display device according to the disclosure includes a substrate, a first transistor provided on the substrate, and a second transistor provided on the substrate, not overlapping the first transistor. The first transistor includes a polycrystalline silicon layer provided on the substrate, a first insulating film provided on the polycrystalline silicon layer, a first gate electrode provided on the first insulating film, and a second insulating film provided on the first gate electrode. The second transistor includes an oxide semiconductor layer provided on the first insulating film, a third insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the third insulating film. The first and third insulating films are SiOx films. The second insulating film is an SiNx film including hydrogen, and is provided overlapping the polycrystalline silicon layer, and is provided not overlapping the oxide semiconductor layer.

A liquid crystal apparatus includes a scan line extending in a ±X direction, a data line extending in a ±Y direction that intersects with the ±X direction, a TFT having a semiconductor layer in which, at a position overlapping with the scan line in plan view, one source drain region and a channel region extend along the ±X direction, and at a position overlapping with the data line in plan view, another source drain region extends along the ±Y direction, and a first upper capacitance element and a second upper capacitance element provided at a position overlapping with the data line, so as to overlap with the other source drain region in plan view.

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a terminal region. A testing electric circuit wiring is disposed in the terminal region. The testing electric circuit wiring includes a first metal layer, a second metal layer, and a third metal layer.

A semiconductor device include a substrate, a buffer layer formed on the substrate, a channel layer formed by an intrinsic polycrystalline silicon layer on the buffer layer, polycrystalline source and drain by non-intrinsic silicon formed on both sides of the polycrystalline silicon layer, a source electrode and a drain electrode formed on the polycrystalline source and the drain, a gate electrode corresponding to the channel layer, and an NiSi.sub.2 contact layer located between the source and the source electrode and between the drain and the drain electrode.