A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching instability.

A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching.

A power MOSFET having a substrate that has a substrate surface into which a trench structure is introduced, wherein first trenches and second trenches form the trench structure. The first trenches and second trenches are arranged in alternation. The first trenches are filled at least partially with a first material and the second trenches are filled with a second material. The first material has a first conductivity type and the second material has a second conductivity type, the first conductivity type and the second conductivity type being different from each other.

A power electronic arrangement includes a semiconductor switch structure configured to assume a forward conducting state. A steady-state current carrying capability of the semiconductor switch structure in the forward conducting state is characterized by a nominal current. The semiconductor switch structure is configured to conduct, in the forward conducting state, at least a part of a forward current in a forward current mode of the power electronic arrangement. A diode structure electrically connected in antiparallel to the semiconductor switch structure is configured to conduct at least a part of a reverse current in a reverse mode of the power electronic arrangement. A thyristor structure electrically connected in antiparallel to the semiconductor switch structure has a forward breakover voltage lower than a diode on-state voltage of the diode structure at a critical diode current value, the critical diode current value amounting to at most five times the nominal current.

Semiconductor device with multiple independent gates. A gate-controlled semiconductor device includes a first plurality of cells of the semiconductor device configured to be controlled by a primary gate, and a second plurality of cells of the semiconductor device configured to be controlled by an auxiliary gate. The primary gate is electrically isolated from the auxiliary gate, and sources and drains of the semiconductor device are electrically coupled in parallel. The first and second pluralities of cells may be substantially identical in structure.

A method for manufacturing a power semiconductor device includes forming a drift region in a substrate, forming a trench in the drift region, forming a gate insulating layer in the trench, depositing a conductive material on the substrate, forming a gate electrode in the trench, forming a body region in the substrate, forming a highly doped source region in the body region, forming an insulating layer that covers the gate electrode, etching the insulating layer to open the body region, implanting a dopant into a portion of the body region to form a highly doped body contact region, so that the highly doped source region and the highly doped body contact region are alternately formed in the body region; and forming a source electrode on the highly doped body contact region and the highly doped source region.

A method for manufacturing a power semiconductor device includes forming a drift region in a substrate, forming a trench in the drift region, forming a gate insulating layer in the trench, depositing a conductive material on the substrate, forming a gate electrode in the trench, forming a body region in the substrate, forming a highly doped source region in the body region, forming an insulating layer that covers the gate electrode, etching the insulating layer to open the body region, implanting a dopant into a portion of the body region to form a highly doped body contact region, so that the highly doped source region and the highly doped body contact region are alternately formed in the body region; and forming a source electrode on the highly doped body contact region and the highly doped source region.

A semiconductor device includes a first transistor disposed in a first region of a semiconductor layer and a second transistor disposed in a second region of the semiconductor layer, and includes, on the surface of the semiconductor layer, first source pads, a first gate pad, second source pads, and a second gate pad. In the plan view of the semiconductor layer, the first and second transistors are aligned in a first direction; the first gate pad is disposed such that none of the first source pads is disposed between the first gate pad and a side parallel to the first direction and located closest to the first gate pad; and the second gate pad is disposed such that none of the second source pads is disposed between the second gate pad and a side parallel to the first direction and located closest to the second gate pad.

A semiconductor integrated circuit includes: a semiconductor monocrystalline region; an insulating film provided on a main surface of the semiconductor monocrystalline region; a conductive layer having a rectangular shape provided on the insulating film and including at least a polycrystalline layer of p-type; electric-field relaxing layers having a lower specific resistivity than the conductive layer and each including a polycrystalline layer of n-type so as to be arranged on both sides of the conductive layer in a direction perpendicular to a current-flowing direction; a high-potential-side electrode in ohmic contact with the conductive layer at one end of the conductive layer in the current-flowing direction; and a low-potential-side electrode in ohmic contact with the conductive layer and the respective electric-field relaxing layers at another end of the conductive layer opposed to the one end in the current-flowing direction, and having a lower potential than the high-potential-side electrode.

A rectifier has a rectification circuit configured to rectify multi-phase alternating current generated by a rotating electric machine into direct current. The rectifier includes upper-arm semiconductor switching elements included in an upper arm of the rectification circuit, upper-arm protection diodes included in the upper arm and each being electrically connected in parallel with one of the upper-arm semiconductor switching elements, lower-arm semiconductor switching elements included in a lower arm of the rectification circuit, and lower-arm protection diodes included in the lower arm and each being electrically connected in parallel with one of the lower-arm semiconductor switching elements. Each of the upper-arm and lower-arm protection diodes is configured to have, when a reverse voltage higher than a breakdown voltage of the protection diode is applied to the protection diode, an operating resistance that is higher than three times an operating resistance of any of the upper-arm and lower-arm semiconductor switching elements.