Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
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H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
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H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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H01L29/76
Unipolar devices; , e.g. field effect transistors
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H01L29/78
with field effect produced by an insulated gate
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H01L29/7801
DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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H01L29/7816
Lateral DMOS transistors, i.e. LDMOS transistors
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H01L29/7817
structurally associated with at least one other device
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H01L29/7818
the other device being a pn-junction diode
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H01L29/7818

SEMICONDUCTOR DEVICE
20180069076 · 2018-03-08 · ·

An HVJT is includes a parasitic diode formed by pn junction between an n.sup.-type diffusion region and a second p.sup.-type separation region surrounding a periphery thereof. The n.sup.-type diffusion region is arranged between an n-type diffusion region that is a high potential side region and an n-type diffusion region that is a low potential side region, and electrically separates these regions. In the n.sup.-type diffusion region, an nchMOSFET of a level-up level shift circuit is arranged. The n.sup.-type diffusion region has a planar layout in which the n.sup.-type diffusion region surrounds a periphery of the n-type diffusion region and a region where the nchMOSFET is arranged protrudes inwardly. A high-concentration inter-region distance L1 of the nchMOS region where the nchMOSFET is arranged is longer than a high-concentration inter-region distance L2 of the parasitic diode. Thus, the reliability of the semiconductor device may be improved.