A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

A method of manufacturing a semiconductor device includes forming a first metal film on a first insulating region and a first metal region directly adjacent to the first insulating region, wherein the first metal film comprises a metal other than the metal of the first metal region, forming a second metal film on a second insulating region and a second metal region directly adjacent to the second insulating region, wherein the second metal film comprises a metal other than the metal of the second metal region, bringing the first metal film and the second metal film into contact with each other, and heat treating the first substrate and the second substrate and thereby electrically connecting the first metal region and the second metal region to each other and simultaneously forming an insulating interface film between the first insulating region and the second insulating region.

A method of manufacturing a semiconductor device includes forming a first metal film on a first insulating region and a first metal region directly adjacent to the first insulating region, wherein the first metal film comprises a metal other than the metal of the first metal region, forming a second metal film on a second insulating region and a second metal region directly adjacent to the second insulating region, wherein the second metal film comprises a metal other than the metal of the second metal region, bringing the first metal film and the second metal film into contact with each other, and heat treating the first substrate and the second substrate and thereby electrically connecting the first metal region and the second metal region to each other and simultaneously forming an insulating interface film between the first insulating region and the second insulating region.

A semiconductor package is provided. The semiconductor package includes a first die having a plurality of first metal pads at a first bonding side and a second die over the first die, having a plurality of second metal pads at a second bonding side facing the first bonding side. Each of the first metal pads corresponds to each of the second metal pads with a pitch no greater than about 10 ?m. The semiconductor package further includes a first dielectric layer surrounding and in contact with a sidewall of the first metal pads and a second dielectric layer surrounding and in contact with a sidewall of the second metal pads. A method for manufacturing a semiconductor package is also provided.

First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.