A semiconductor chip includes: a base substrate; a conductive pad on one surface of the base substrate; an insulating layer on the one surface of the base substrate and having an opening exposing a portion of the conductive pad; and a bump on the exposed portion of the conductive pad and on the insulating layer around the opening. The bump includes a plurality of concave portions corresponding to the opening and is arranged in a longitudinal direction of the bump.

A semiconductor device includes a main pad part and a sub pad part formed in a peripheral area of at least one side of the main pad part. The sub pad part is spaced apart from the main pad part. The sub pad part operates in a first state in which the sub pad part is short-circuited with the main pad part or in a second state in which the sub pad part is open from the main pad part.

A semiconductor device includes a main pad part and a sub pad part formed in a peripheral area of at least one side of the main pad part. The sub pad part is spaced apart from the main pad part. The sub pad part operates in a first state in which the sub pad part is short-circuited with the main pad part or in a second state in which the sub pad part is open from the main pad part.

Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.

Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

Various semiconductor chip packages with undermounted passive devices and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a first side of a carrier substrate where the carrier substrate includes a second side opposite the first side. At least one passive device is coupled to the second side of the carrier substrate. The at least one passive device includes at least one first terminal electrically coupled to the semiconductor chip and at least one second terminal adapted to couple to a printed circuit board.

Various semiconductor chip packages with undermounted passive devices and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a first side of a carrier substrate where the carrier substrate includes a second side opposite the first side. At least one passive device is coupled to the second side of the carrier substrate. The at least one passive device includes at least one first terminal electrically coupled to the semiconductor chip and at least one second terminal adapted to couple to a printed circuit board.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.