A semiconductor package including a semiconductor chip having a chip pad thereon; a first insulating layer; a redistribution line pattern on the first insulating layer; a redistribution via pattern through the first insulating layer to connect the chip pad to the redistribution line pattern; a second insulating layer covering the redistribution line pattern and including a first part having a first thickness and a second part having a second thickness. the second part being inward relative to the first part; a first conductive pillar through the first part and connected to the redistribution line pattern; a second conductive pillar through the second part and connected to the redistribution line pattern; a first connection pad on the first conductive pillar; a second connection pad on the second conductive pillar; a first connection terminal contacting the first connection pad; and a second connection terminal contacting the second connection pad.

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

A display panel and a method of fabricating the same, and a display device are provided, the display panel includes a display substrate a package substrate opposite to each other, the display substrate includes a first base substrate; and a first electrode, an electroluminescent layer and a second electrode disposed on the first base substrate in sequence; the package substrate includes a second base substrate; and a conductive layer on the second base substrate, the conductive layer and the second electrode facing towards each other; the display panel further includes a conductive adhesive between the second electrode and the conductive layer, the conductive adhesive is configured to bond the display substrate with the package substrate, and electrically connect the second electrode with the conductive layer.

A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

An arrangement is disclosed. In one example, the arrangement of a conductor and an aluminum layer soldered together comprises a substrate and the aluminum layer disposed over the substrate. The aluminum forms a first bond metal. An intermetallic compound layer is disposed over the aluminum layer. A solder layer is disposed over the intermetallic compound layer, wherein the solder comprises a low melting majority component. The conductor is disposed over the solder layer, wherein the conductor has a soldering surface which comprises a second bond metal. The intermetallic compound comprises aluminum and the second bond metal and is predominantly free of the low melting majority component.

An arrangement is disclosed. In one example, the arrangement of a conductor and an aluminum layer soldered together comprises a substrate and the aluminum layer disposed over the substrate. The aluminum forms a first bond metal. An intermetallic compound layer is disposed over the aluminum layer. A solder layer is disposed over the intermetallic compound layer, wherein the solder comprises a low melting majority component. The conductor is disposed over the solder layer, wherein the conductor has a soldering surface which comprises a second bond metal. The intermetallic compound comprises aluminum and the second bond metal and is predominantly free of the low melting majority component.

The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.

The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.