A bonding element and a method for manufacturing the same thereof are provide, wherein the method comprises the following steps: providing a carrier substrate; forming a first metal layer on the carrier substrate; forming a first insulating layer on the first metal layer, wherein the first insulating layer includes a first through hole; forming a first passivation layer and a first conductive layer in the first through hole, wherein the first passivation layer and the first conductive layer in the first through hole form a first connecting bump; forming a first substrate on the first connection bump and the first insulating layer; removing the carrier substrate and the first metal layer to form a first sub-bonding element; and connecting the first sub-bonding element and a second sub-bonding element with a surface of the first passivation of the first connection bump to form the bonding element.

A bonding element and a method for manufacturing the same thereof are provide, wherein the method comprises the following steps: providing a carrier substrate; forming a first metal layer on the carrier substrate; forming a first insulating layer on the first metal layer, wherein the first insulating layer includes a first through hole; forming a first passivation layer and a first conductive layer in the first through hole, wherein the first passivation layer and the first conductive layer in the first through hole form a first connecting bump; forming a first substrate on the first connection bump and the first insulating layer; removing the carrier substrate and the first metal layer to form a first sub-bonding element; and connecting the first sub-bonding element and a second sub-bonding element with a surface of the first passivation of the first connection bump to form the bonding element.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.

During electro-oxidative metal removal on a semiconductor substrate, the substrate having a metal layer is anodically biased and the metal is electrochemically dissolved into an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) can inadvertently form on the surface of the substrate during electrochemical metal removal and cause defects during subsequent semiconductor processing. Contamination with such particles can be mitigated by preventing particle formation and/or by dissolution of particles. In one implementation, mitigation involves using an electrolyte that includes an oxidizer, such as hydrogen peroxide, during the electrochemical metal removal. An electrochemical metal removal apparatus in one embodiment has a conduit for introducing an oxidizer to the electrolyte and a sensor for monitoring the concentration of the oxidizer in the electrolyte.

During electro-oxidative metal removal on a semiconductor substrate, the substrate having a metal layer is anodically biased and the metal is electrochemically dissolved into an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) can inadvertently form on the surface of the substrate during electrochemical metal removal and cause defects during subsequent semiconductor processing. Contamination with such particles can be mitigated by preventing particle formation and/or by dissolution of particles. In one implementation, mitigation involves using an electrolyte that includes an oxidizer, such as hydrogen peroxide, during the electrochemical metal removal. An electrochemical metal removal apparatus in one embodiment has a conduit for introducing an oxidizer to the electrolyte and a sensor for monitoring the concentration of the oxidizer in the electrolyte.

A semiconductor device such as a chip-scale package is provided. Aspects of the present disclosure further relate to a method for manufacturing such a device. According to an aspect of the present disclosure, a semiconductor device is provided that includes a conformal coating arranged on its sidewalls and on the perimeter part of the semiconductor die of the semiconductor device. To prevent the conformal coating from covering unwanted areas, such as electrical terminals, a sacrificial layer is arranged prior to arranging the conformal coating. By removing the sacrificial layer, the conformal coating can be removed locally. The conformal coating covers the perimeter part of the semiconductor die by the semiconductor device, in which part a remainder of a sawing line or dicing street is provided.

The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.

A semiconductor package includes a second semiconductor chip disposed on a first semiconductor chip. The first semiconductor chip includes a first semiconductor substrate, a through via, and a lower pad disposed on the through via. The lower pad includes a first segment and a second segment connected thereto. The first segment overlaps the through via. The second segment is disposed on an edge region of the first segment. The second segment has an annular shape. The second semiconductor chip includes a second semiconductor substrate, an upper pad disposed on a bottom surface of the second semiconductor substrate, and a connection terminal disposed between the upper and lower pads. The second segment at least partially surrounds a lateral surface of the upper pad. A level of a top surface of the second segment is higher than that of an uppermost portion of the connection terminal.