A device has a first stack of thin films, the first stack of thin films having a first opposing surface and a first connection surface, wherein the first connection surface contacts a first superconducting region; a second stack of thin films, the second stack of thin films having a second opposing surface and a second connection surface, wherein the second connection surface contacts a second superconducting region; and a superconducting bump bond electrically connecting the first and second opposing surfaces, the superconducting bump bond maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin, wherein at least one of the first or second superconducting regions comprise material with a melting point of at least 700 degrees Celsius.

A technique relates to a device. First thin films are characterized by having a first opposing surface and a first connection surface in which the first connection surface is in physical contact with a first superconducting region. Second thin films are characterized by having a second opposing surface and a second connection surface in which the first and second opposing surfaces are opposite one another. The second connection surface is in physical contact with a second superconducting region. A solder material electrically connects the first and second opposing surfaces, and the solder material is characterized by maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin. The first and second superconducting regions are formed of materials that have a melting point of at least 700 degrees Celsius.

A technique relates to a device. First thin films are characterized by having a first opposing surface and a first connection surface in which the first connection surface is in physical contact with a first superconducting region. Second thin films are characterized by having a second opposing surface and a second connection surface in which the first and second opposing surfaces are opposite one another. The second connection surface is in physical contact with a second superconducting region. A solder material electrically connects the first and second opposing surfaces, and the solder material is characterized by maintaining a low ohmic electrical contact between the first and second opposing surfaces at temperatures below 100 degrees Kelvin. The first and second superconducting regions are formed of materials that have a melting point of at least 700 degrees Celsius.

A semiconductor chip includes: a base substrate; a conductive pad on one surface of the base substrate; an insulating layer on the one surface of the base substrate and having an opening exposing a portion of the conductive pad; and a bump on the exposed portion of the conductive pad and on the insulating layer around the opening. The bump includes a plurality of concave portions corresponding to the opening and is arranged in a longitudinal direction of the bump.

A semiconductor chip includes: a base substrate; a conductive pad on one surface of the base substrate; an insulating layer on the one surface of the base substrate and having an opening exposing a portion of the conductive pad; and a bump on the exposed portion of the conductive pad and on the insulating layer around the opening. The bump includes a plurality of concave portions corresponding to the opening and is arranged in a longitudinal direction of the bump.

A structure has a first substrate bonded to a first under-bump metallization (UBM) structure, the first UBM structure comprising a first bonding region laterally surrounded by a first superconducting region. A second substrate is bonded to a second under-bump metallization (UBM) structure, the second UBM structure comprising a second bonding region laterally surrounded by a second superconducting region; and a superconducting solder material joins the first UBM structure to the second UBM structure.

A structure has a first substrate bonded to a first under-bump metallization (UBM) structure, the first UBM structure comprising a first bonding region laterally surrounded by a first superconducting region. A second substrate is bonded to a second under-bump metallization (UBM) structure, the second UBM structure comprising a second bonding region laterally surrounded by a second superconducting region; and a superconducting solder material joins the first UBM structure to the second UBM structure.

A technique relates to a structure. An under-bump-metallization (UBM) structure includes a first region and a second region. The first and second regions are laterally positioned in the UBM structure. The first region includes a superconducting material. A substrate opposes the UBM structure. A superconducting solder material joins the first region to the substrate and the second region to the substrate.

A technique relates to a structure. An under-bump-metallization (UBM) structure includes a first region and a second region. The first and second regions are laterally positioned in the UBM structure. The first region includes a superconducting material. A substrate opposes the UBM structure. A superconducting solder material joins the first region to the substrate and the second region to the substrate.

A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.