A packaged device has a die of semiconductor material bonded to a support. An electromagnetic shielding structure surrounds the die and is formed by a grid structure of conductive material extending into the support and an electromagnetic shield, coupled together. A packaging mass embeds both the die and the electromagnetic shield. The electromagnetic shield is formed by a plurality of metal ribbon sections overlying the die and embedded in the packaging mass. Each metal ribbon section has a thickness-to-width ratio between approximately 1:2 and approximately 1:50.

A semiconductor package includes a first chip, an insulating protection layer, a second chip, a plurality of second conductive bumps and an underfill. The insulating protection layer is disposed on a first active surface of the first chip and includes a concave. Projections of a plurality of first inner pads and a plurality of first outer pads of the first chip projected on the insulating protection layer are located in the concave and out of the concave, respectively. The second chip is flipped on the concave and includes a plurality of second pads. Each of the first inner pads is electrically connected to the corresponding second pad through the corresponding second conductive bump. The underfill is disposed between the concave and the second chip and covers the second conductive bumps.

A semiconductor package includes main pad structures and dummy pad structures between a first semiconductor chip and a second semiconductor chip. The main pad structures include first main pad structures apart from one another on the first semiconductor chip and second main pad structures placed apart from one another on the second semiconductor chip and bonded to the first main pad structures. The dummy pad structures include first dummy pad structures including first dummy pads apart from one another on the first semiconductor chip and first dummy capping layers on the first dummy pads, and second dummy pad structures including second dummy pads apart from one another on the second semiconductor chip and second dummy capping layers on the second dummy pads. The first dummy capping layers of the first dummy pad structures are not bonded to the second dummy capping layers of the second dummy pad structures.

An enhanced Flash chip and a method for packaging chip are provided to solve the problems of high design complexity. The enhanced Flash chip comprises: a FLASH and a RPMC packaged integrally, wherein the same IO pins in the FLASH and in the RPMC are mutually connected and are connected to the same external sharing pin of the chip; an external instruction is transmitted to the FLASH and the RPMC through the external sharing pin of the chip, and the controller of the FLASH and the controller of the RPMC respectively judge whether to execute the external instruction; and the FLASH and the RPMC further comprise internal IO pins, respectively, the internal IO pins of the FLASH and the internal IO pins of the RPMC are mutually connected, and internal mutual communication between the FLASH and the RPMC is performed through the pair of mutually connected internal IO pins.

A transceiver integrated circuit comprised of multiple semiconductor technologies that are heterogeneously integrated. The main functions of the transceiver integrated circuit being a power amplifier, low noise amplifier, switch and digital functions. Each function is designed in the desired semiconductor technology where the critical parts of that semiconductor technology are combined with passive components of that function on another semiconductor technology. The result is a transceiver integrated circuit with improved performance and lower cost.

A multi-chip package structure includes a first chip, a second chip, a circuit layer, a plurality of first conductive bumps, a plurality of second conductive bumps and an underfill. The first chip has a chip bonding region, a plurality of first inner pads and first outer pads. The circuit layer is disposed on the first chip and includes a plurality of insulating layers and at least one metal layer. The insulating layers have a groove disposed between the first inner pads and the first outer pads and surrounding the first inner pads. The first conductive bumps are disposed on the first outer pads. The second chip is flipped on the chip bonding region. Each first inner pad is electrically connected to a second pad of the second chip through the second conductive bump. The underfill is disposed between the first and second chips and covers the second conductive bumps.

An electronic device includes a first electronic component and a second electronic component. The first electronic component includes a first pad area including first pads and second pads spaced apart from the first pads. A number of the first pads is greater than a number of the second pads. The second electronic component includes first bumps electrically connected to the first pads, and second bumps electrically connected to the second pads. Each of the second bumps has a bonding area greater than a bonding area of each of the first bumps. A conductive adhesive layer is disposed between the first electronic component and the second electronic component to electrically connect the first pads to the first bumps.

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

A multi-chip isolation (ISO) device package includes a leadframe including leads, an interposer substrate including a top copper layer and a bottom metal layer, with a dielectric layer in-between. A first IC die and a second IC die include circuitry including a transmitter or a receiver, and first and second bond pads are both attached top side up in the package. A laminate transformer is attached to the top copper layer positioned lateral to the IC die. Bondwires wirebond the first bond pads to first pads on the laminate transformer and to a first group of the leads or the lead terminals, and bondwires wirebond the second bond pads to second pads on the laminate transformer and to a second group of the leads or the lead terminals. A mold compound provides encapsulation.

A semiconductor package includes a carrier, a package module and a second package body. The package module is disposed on the carrier and includes a first substrate, a first electronic element, a first conductive wire and a first package body. The first substrate has a first electrical surface facing the carrier and a second electrical surface opposite to the first electrical surface. The first electronic element is disposed on the first electrical surface. The first conductive wire connects the electronic element with the first electrical surface of the first substrate. The first package body encapsulates the first electrical surface, the first electronic element and the first solder wire. The second package body encapsulates the package module and a portion of the carrier.