A semiconductor device includes a substrate, a semiconductor chip, a plurality of bonding pads on a surface of the semiconductor chip, a plurality of probe pads on a surface of the semiconductor chip, a plurality of connection pads on a surface of the substrate, and a plurality of bonding wires that electrically connect the bonding pads and the connection pads. The plurality of bonding pads include a first bonding pad and a second bonding pad, the plurality of probe pads include a first probe pad and a second probe pad, and a part of the first probe pad is disposed between the second bonding pad and the second probe pad.

An amplifier includes: a first transistor chip including a plurality of cells and provided beside an input matching substrate; a second transistor chip including a plurality of cells and provided beside the input matching substrate; a plurality of first bonding wires connecting the input matching substrate and the first transistor chip; and a plurality of second bonding wires connecting the input matching substrate and the second transistor chip, and variance of the mutual inductance of the first bonding wires and the second bonding wires is compensated by adjusting the self-inductance of the first bonding wires and the second bonding wires.

An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

The present disclosure provides a device die, a die assembly and an electronic system. The device die includes a package and a plurality of transfer pads disposed on a functional surface of the package. The transfer pads are divided into a plurality of segments electrically isolated from each other. In an adjacent pair of transfer pads, there is only one electrical connection between the transfer pads, comprising one segment in one transfer pad electrically connected to one segment in the other transfer pad. The die assembly includes a pair of device dies stacked in a stepped configuration. The electronic system includes a supporting member having at least one metallic layer, and a plurality of device dies disposed on the supporting member and mechanically and electrically coupled to the metallic layer by a plurality of conductive strings.

A semiconductor device includes: a wiring board including first to third bonding pads; a chip stack including semiconductor chips, each chip having first to third connection pads, the first connection pads being connected in series to each other and to the first bonding pad through first bonding wires to form a first transmission channel, the second connection pads being connected in series to each other and to the second bonding pad through second bonding wires to form a second transmission channel, and the third connection pads being connected in series to each other and to the third bonding pad through third bonding wires to form a third transmission channel; and at least one of a first and a second terminating resistor being provided above the chip stack, the first resistor being connected to the first and second channels, the second resistor being connected to the first and third channels.

A transmission circuit includes: an upper-layer clock bonding pad configured to transmit a clock signal; M upper-layer data bonding pads configured to transmit data signals; a lower-layer clock bonding pad electrically connected with the upper-layer clock bonding pad, and an area of the lower-layer clock bonding pad is smaller than that of the upper-layer clock bonding pad; and M lower-layer data bonding pads electrically connected with the M upper-layer data bonding pads in a one-to-one correspondence, and an area of a lower-layer data bonding pad is smaller than that of an upper-layer data bonding pad. The upper-layer clock bonding pad and the upper-layer data bonding pads are located on a first layer, the lower-layer clock bonding pad and the lower-layer data bonding pads are located on a second layer.

A package structure includes N first pads, N redistribution layers, second pads and third pads. Each first pad is formed by a interconnect layer exposed by one via hole. Each redistribution layer covers the isolation layer and is electrically connected with a corresponding first pad. Some first pads are arranged side by side along a first direction near a first edge of the semiconductor functional structure, and other first pads are arranged side by side along the first direction near a second edge of the semiconductor functional structure. The exposed parts of each redistribution layer form a second and a third pad. Both an offset direction and an offset distance between a center point of the second pad and that of a corresponding first pad are same. A relative position between the second pad and the third pad for some redistribution layers is different from that for others.

A semiconductor package includes a package substrate, a base module disposed on the package substrate and configured to include an intermediate chip, bonding wires connecting the intermediate chip to the package substrate, a lower-left chip disposed between the base module and the package substrate, and an upper-left chip disposed on the base module. The base module further includes an encapsulant encapsulating the intermediate chip, through vias electrically connected to the upper-left chip, and redistributed lines (RDLs) connecting the intermediate chip to the through vias and extending to provide connection parts which are spaced apart from the through vias and are connected to the lower-left chip.

A semiconductor package includes a first chip and a second chip arranged side by side on a carrier substrate. The first chip is provided with a high-speed signal pads along a first side in proximity to the second chip. The second chip includes a redistribution layer, and the redistribution layer is provided with data (DQ) pads along the second side in proximity to the first chip. A plurality of first bonding wires is provided to directly connect the high-speed signal pads to the DQ pads. The redistribution layer of the second chip is provided with first command/address (CA) pads along the third side opposite to the second side, and a plurality of dummy pads corresponding to the first CA pads. The plurality of dummy pads are connected to second CA pads disposed along a fourth side of the second chip via interconnects of the redistribution layer.

The present disclosure provides a device die, a die assembly and an electronic system. The device die includes a package and a plurality of transfer pads disposed on a functional surface of the package. The transfer pads are divided into a plurality of segments electrically isolated from each other. In an adjacent pair of transfer pads, there is only one electrical connection between the transfer pads, comprising one segment in one transfer pad electrically connected to one segment in the other transfer pad. The die assembly includes a pair of device dies stacked in a stepped configuration. The electronic system includes a supporting member having at least one metallic layer, and a plurality of device dies disposed on the supporting member and mechanically and electrically coupled to the metallic layer by a plurality of conductive strings.