The present application discloses a method for fabricating a semiconductor device. The method includes providing a first chip comprising a first substrate, a first redistribution layer positioned above the first substrate, a first lower bonding pad positioned on the first redistribution layer, and a second lower bonding pad positioned above the first substrate and distant from the first lower bonding pad. The method also includes providing a second chip comprising a dense region and a loose region adjacent to the dense region; a plurality of upper pads positioned on the first lower bonding pad and the second lower bonding pad; and a plurality of second redistribution layers positioned on the plurality of upper pads. The method further performs bonding the second chip onto the first chip in a face-to-face manner, wherein the plurality of upper pads contact the first lower bonding pad and the second lower bonding pad.

A fan-out semiconductor package module includes: a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole, an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip, a second interconnection member disposed on the first interconnection member and the semiconductor chip, a third interconnection member disposed on the encapsulant, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the third interconnection member, the first to third interconnection members including, respectively, redistribution layers electrically connected to connection pads of the semiconductor chip; and a component package stacked on the fan-out semiconductor package and including a wiring substrate connected to the second interconnection member through the first connection terminals and a plurality of mounted components mounted on the wiring substrate.

A fan-out semiconductor package module includes: a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole, an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip, a second interconnection member disposed on the first interconnection member and the semiconductor chip, a third interconnection member disposed on the encapsulant, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the third interconnection member, the first to third interconnection members including, respectively, redistribution layers electrically connected to connection pads of the semiconductor chip; and a component package stacked on the fan-out semiconductor package and including a wiring substrate connected to the second interconnection member through the first connection terminals and a plurality of mounted components mounted on the wiring substrate.

A fan-out semiconductor package module includes: a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole, an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip, a second interconnection member disposed on the first interconnection member and the semiconductor chip, a third interconnection member disposed on the encapsulant, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the third interconnection member, the first to third interconnection members including, respectively, redistribution layers electrically connected to connection pads of the semiconductor chip; and a component package stacked on the fan-out semiconductor package and including a wiring substrate connected to the second interconnection member through the first connection terminals and a plurality of mounted components mounted on the wiring substrate.

Semiconductor devices with redistribution pads are disclosed. The semiconductor device includes a plurality of electric pads provided on a semiconductor substrate, and a plurality of redistribution pads electrically connected to the electric pads and an outer terminal. The plurality of redistribution pads includes a plurality of first redistribution pads constituting a transmission path for a first electrical signal and at least one second redistribution pad constituting a transmission path for a second electrical signal different from the first electrical signal. The first redistribution pads are arranged on the semiconductor substrate to form at least two rows, and the at least one second redistribution pad is disposed between the at least two rows of the first redistribution pads.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first chip including a first substrate, a first redistribution layer above the first substrate, a first lower bonding pad positioned on the first redistribution layer, and a second lower bonding pad above the first substrate; and a second chip including a dense region and a loose region adjacent to the dense region, upper pads on the first lower bonding pad and the second lower bonding pad, second redistribution layers on the upper pads, and a first redistribution plug and a second redistribution plug respectively and correspondingly on the second redistribution layers. The first redistribution plug is at the dense region and includes a first aspect ratio. The second redistribution plug is at the loose region and includes a second aspect ratio less than the first aspect ratio.

An integrated circuit (IC) die has side input/output (IO) pads located along each side of the die interior. Each die corner has a corner IO pad. The side IO pads adjacent to the corner IO pads have shortened passivation regions in the top metal layer (TML) that define TML access regions. TML traces run through the TML access regions to connect the corner IO pads to the die interior. Providing corner IO pads enables an IC die to have up to four more IO pads than a comparable conventional IC die that does not have any corner IO pads, or an IC die to have the same number of IO pads within a smaller overall footprint.

Semiconductor devices with redistribution pads are disclosed. The semiconductor device includes a plurality of electric pads provided on a semiconductor substrate, and a plurality of redistribution pads electrically connected to the electric pads and an outer terminal. The plurality of redistribution pads includes a plurality of first redistribution pads constituting a transmission path for a first electrical signal and at least one second redistribution pad constituting a transmission path for a second electrical signal different from the first electrical signal. The first redistribution pads are arranged on the semiconductor substrate to form at least two rows, and the at least one second redistribution pad is disposed between the at least two rows of the first redistribution pads.

The present application discloses a semiconductor device. The semiconductor device includes a first chip including a first substrate, a first redistribution layer above the first substrate, a first lower bonding pad positioned on the first redistribution layer, and a second lower bonding pad above the first substrate; and a second chip including a dense region and a loose region adjacent to the dense region, upper pads on the first lower bonding pad and the second lower bonding pad, second redistribution layers on the upper pads, and a first redistribution plug and a second redistribution plug respectively and correspondingly on the second redistribution layers. The first redistribution plug is at the dense region and includes a first aspect ratio. The second redistribution plug is at the loose region and includes a second aspect ratio less than the first aspect ratio.