A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

A semiconductor package includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip has a first pad region located at a first region of the first semiconductor chip and a second pad region located at a second region of the first semiconductor chip. The second semiconductor chip has a third pad region located at a first region of the second semiconductor chip and a fourth pad region located at a second region of the second semiconductor chip. The second semiconductor chip is stacked on the first semiconductor chip to be offset in a first lateral direction relative to the first semiconductor chip.

The present disclosure provides a magnetic sensor with improved accuracy or reliability. The magnetic sensor includes a first magnetism detection element that outputs a first detection signal, a second magnetism detection element that outputs a second detection signal, and a detection circuit that receives the first and second detection signals. The detection circuit corrects the first detection signal for each section in a ( 1/16n) period of the first detection signal, when n is a natural number. With this configuration, the magnetic sensor has high accuracy or high reliability, and therefore is useful as, for example, a magnetic sensor used for detecting a steering angle and the like of a vehicle.

A fan-out semiconductor package includes: a first connection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first connection member and the inactive surface of the semiconductor chip; a second connection member disposed on the first connection member and the active surface of the semiconductor chip; a resin layer disposed on the encapsulant; and a rear redistribution layer embedded in the encapsulant so that one surface thereof is exposed by the encapsulant, wherein the resin layer covers at least portions of the exposed one surface of the rear redistribution layer, and the rear redistribution layer is electrically connected to the redistribution layer of the first connection member through connection members formed in first openings penetrating through the resin layer and the encapsulant.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

The invention concerns a discrete electronic component including: a semiconductor chip including a transistor, the chip including a first metallization of connection to a first conduction region of the transistor; and a printed circuit board including first and second separate connection pads, wherein: the chip is assembled on the printed circuit board so that the first metallization of the chip is in contact with the first and second connection pads of the printed circuit board; and the assembly including the semiconductor chip and the printed circuit board is encapsulated in a package made of an insulating material leaving access to first and second connection terminals of the component connected, inside of the package, respectively to the first and second connection pads of the printed circuit board.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads; and an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip. The first interconnection member includes a first insulating layer in contact with the second interconnection member, a first redistribution layer disposed on a surface of the first insulating layer in contact with the second interconnection member and electrically connected to the connection pads, and a blocking layer disposed on the surface of the first insulating layer on which the first redistribution layer is disposed and surrounding the through-hole.

Semiconductor devices including stacked semiconductor dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die coupled to a package substrate and a second semiconductor die stacked over the first semiconductor die and laterally offset from the first semiconductor die. The second semiconductor die can accordingly include an overhang portion that extends beyond a side of the first semiconductor die and faces the package substrate. In some embodiments, the second semiconductor die includes bond pads at the overhang portion that are electrically coupled to the package substrate via conductive features disposed therebetween. In certain embodiments, the first semiconductor die can include second bond pads electrically coupled to the package substrate via wire bonds.

A semiconductor device includes a lead frame, a semiconductor element, a clip, a sealing material, and a thermal resistance portion. The semiconductor element is mounted on the lead frame. The clip is bonded through a bonding material to an electrode on a surface of the semiconductor element opposite to the lead frame. The sealing material covers the semiconductor element and the clip. The thermal resistance portion is disposed in a bonding region bonded through the bonding material between the semiconductor element and the clip. The thermal resistance portion has a thermal resistance higher than that of a different portion in the bonding region.

A semiconductor package according to the exemplary embodiments of the disclosure includes a base substrate including a base bonding pad, a first semiconductor chip disposed on the base substrate, a first adhesive layer provided under the first semiconductor chip, a first bonding pad provided in a bonding region on an upper surface of the first semiconductor chip, a first bonding wire interconnecting the base bonding pad and the first bonding pad, and a crack preventer provided in a first region at the upper surface of the first semiconductor chip. The crack preventer includes dummy pads provided at opposite sides of the first region and a dummy wire interconnecting the dummy pads.