The present application provides an integrated package device, a method of fabricating an integrated package device, and a memory system. The integrated package device may include at least one package module. Each package module may include a first sub-package module with a first electronic devices. Each package module may include a second sub-package module including a second electronic devices. Each package module may include a first re-distribution layer connected with first pads. Each package module may include a second re-distribution layer connected with second pads.

An integrated circuit die substrate has one or more capacitors attached to an edge surface of the substrate. The substrate has a top surface and a bottom surface, at least one of which includes a die mounting area, and at least one of which includes system interconnect terminals. A substrate edge surface is disposed along a peripheral end of the substrate and is oriented substantially orthogonally to the top and bottom surfaces. A pair of conductive edge terminals is disposed on the substrate edge surface. Each of the edge terminals is electrically coupled to a respective substrate conductor disposed on or inside the substrate. A capacitor is attached exteriorly to the substrate at the substrate edge surface such that terminals of the capacitor are electrically coupled to respective ones of the edge terminals. An integrated circuit die is attached at the die mounting area.

A semiconductor package includes: a semiconductor chip including an active layer; a bump pad positioned on the active layer; a passivation layer covering the bump pad and including a first opening and a second opening, wherein the first opening exposes a first portion of the second surface of the bump pad, and the second opening exposes a second portion of the second surface of the bump pad; a first bump disposed on the first portion of the second surface of the bump pad, which is exposed through the first opening; and a test bump disposed on the second portion of the second surface of the bump pad, which is exposed through the second opening, wherein the first bump includes at least one metal layer, and a length of the test bump in a vertical direction is less than a length of the first bump in the vertical direction.

A method includes electrically connecting first and second semiconductor elements to conductive plates, respectively, on the front surface of one or more insulating substrates disposed on a metal base; disposing, on the base, a case including a chassis, a first lead frame having a first wiring part extending in a wired direction parallel to the front surface, and a second lead frame having a second wiring part in the wiring direction to overlap the first wiring part with gap that are integrally molded together; and attaching one or more insulating members that include a clamping part sandwiching the first and second wiring parts from the rear surface of the first wiring part and the front surface of the second wiring part in an attachment area thereof and a wiring gap part filling the gap in the attachment area, before joining the lead frames to circuit patterns, respectively.

A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

An electronic component embedded substrate 1 includes a substrate 10 having a wiring layer 11 and an insulating layer 12; an electronic component 20 built in the substrate 10, and having a pair of electrode layers 21A and 21B, and a dielectric layer 22; and a stress relieving layer 30 provided closer to the wiring layer 11 than the insulating layer 12 is in the lamination direction, wherein at least part of an end portion of the electronic component 20 on the wiring layer 11 side is in contact with the stress relieving layer 30, wherein at least part of an end portion of the electronic component 20 on the insulating layer 12 side is in contact with the insulating layer 12, and wherein the Young's modulus of the stress relieving layer 30 is lower than the Young's modulus of the electrode layer 21B.

A semiconductor package includes a lower substrate that includes a chip mounting region and a peripheral region, where the lower substrate includes lower redistribution wirings; a first semiconductor chip on the chip mounting region, where the first semiconductor chip includes: a silicon substrate that includes a first surface and a second surface that are opposite to each other, an activation layer on the second surface, and a chip redistribution wiring layer that is on the first surface and includes a plurality of chip redistribution wirings that are electrically insulated from the activation layer; a plurality of connecting members that are on the peripheral region and are electrically connected to the lower redistribution wirings; and an upper substrate on the plurality of connecting members, and where at least a portion of the first semiconductor chip is in a through cavity defined by the upper substrate.

A semiconductor package includes: a first substrate including lower bonding pads; at least one semiconductor chip disposed on the first substrate; bumps disposed on a first surface of the first substrate; and a mold layer disposed on the first substrate and covering the at least one semiconductor chip, wherein the bumps include: a pillar portion bonded to the first surface of the first substrate; a solder portion bonded to a first surface of the pillar portion; and a metal layer including a material including high-melting-point metal atoms, wherein the metal layer covers a first surface of the solder portion, wherein the solder portion includes the high-melting-point metal atoms.

A bonded structure is disclosed. The bonded structure can include an interconnect structure that has a first side and a second side opposite the first side. The bonded structure can also include a first die that is mounted to the first side of the interconnect structure. The first die can be directly bonded to the interconnect structure without an intervening adhesive. The bonded structure can also include a second die that is mounted to the first side of the interconnect structure. The bonded structure can further include an element that is mounted to the second side of the interconnect structure. The first die and the second die are electrically connected by way of at least the interconnect structure and the element.

A semiconductor device according to an embodiment includes a substrate, a plurality of first semiconductor chips, a plurality of first resins, and a second semiconductor chip. The substrate has a first surface. The plurality of first semiconductor chips are stacked while being displaced in a direction substantially parallel to the first surface. The plurality of first resins are provided on respective lower surfaces of the plurality of first semiconductor chips. The second semiconductor chip is provided on the first surface. At least one of the plurality of first resins is in contact with an upper surface of the second semiconductor chip.