A package structure and a formation method are provided. The package structure includes a chip structure bonded to a substrate through dielectric-to-dielectric bonding and metal-to-metal bonding and interconnect dielectric layers formed over the chip structure. The package structure further includes interconnect conductive structures formed in the interconnect dielectric layers and a transmission line formed in the interconnect dielectric layers. The package structure further includes a magnetic structure formed in the interconnect dielectric layers and separated from the transmission line by the interconnect dielectric layers. In addition, the magnetic structure is electrically isolated from the chip structure and the interconnect conductive structures.

Disclosed is a semiconductor package comprising a first semiconductor chip, a second semiconductor chip, and a connection die. A hybrid bonding may be established between the connection die and the first semiconductor chip and between the connection die and the second semiconductor chip. The first semiconductor chip includes a first semiconductor substrate having first and second surfaces. The first surface is closer than the second surface to the connection die. The second semiconductor chip includes a second semiconductor substrate having third and fourth surfaces. The third surface is closer than the fourth surface to the connection die. The first and second semiconductor chips further include a power distribution wiring layer on the second surface of the first semiconductor chip and the fourth surface of the second semiconductor substrate.

A semiconductor package includes: a redistribution layer structure; first semiconductor and second dies on the redistribution, the second semiconductor die positioned next to the first semiconductor die; core balls positioned on the redistribution structure and next to the first semiconductor chip die; a bridge die configured to electrically connect the first and second semiconductor dies to each other on the first and second semiconductor dies; a substrate including an upper plate portion and a sidewall portion, the upper plate portion and the sidewall portion defining a cavity, the upper plate portion positioned on the bridge die, the side wall portion positioned on the core balls, the bridge die positioned within the cavity; and a molding material configured to mold the first semiconductor die, the second semiconductor die, the core balls, and the bridge die between the redistribution layer structure and the substrate.

A semiconductor package includes a package substrate, a first device on the package substrate and a second device on the package substrate and horizontally spaced apart from the first device, where the package substrate includes a first redistribution layer, a second redistribution layer on the first redistribution layer, a core section between the first redistribution layer and the second redistribution layer, a dummy structure in the first redistribution layer and on a bottom surface of the core section and a bridge chip in the second redistribution layer and on a top surface of the core section, and where a thermal conductance of the dummy structure is greater than a thermal conductance of the first redistribution layer.

A semiconductor package includes a logic die that includes a backside power delivery network layer, an interposer die disposed on the logic die, a plurality of memory dies stacked on the interposer die, and a mold layer that covers the interposer die and the memory dies. Each of the logic die and the interposer die has a first width.

A wiring substrate includes a first re-distribution layer, a second re-distribution layer on the first re-distribution layer, and a core portion between the first re-distribution layer and the second re-distribution layer, wherein the core portion includes a bottom surface disposed on a top surface of the first re-distribution layer, and a first intermediate surface disposed on the top surface of the first re-distribution layer, wherein a distance between the top surface of the first re-distribution layer and the core portion along the first intermediate surface, which is measured in a direction perpendicular to the top surface of the first re-distribution layer, increases as a distance from the bottom surface increases.

A light emitting device including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a common electrode electrically connected to a first conductivity type semiconductor layer of each of the first, second, and third LED stacks, in which the common electrode includes a step in at least one of the first, second and third LED stacks.

A semiconductor device includes: at least one control chip provided at a position overlapping a first die pad in plan view and electrically connected to the first die pad; a plurality of power chips mounted to respective second die pads; a plurality of circuit patterns and a plurality of wire pads arranged on a top surface of an insulating substrate provided on a top surface of the first die pad; a plurality of first control wires electrically connecting the plurality of wire pads and the at least one control chip; and a plurality of second control wires electrically connecting the at least one control chip and the plurality of power chips.

A package structure includes a first semiconductor die, a second semiconductor die, an insulating encapsulant and a redistribution layer. The insulating encapsulant laterally surrounds the first semiconductor die and the second semiconductor die, wherein the insulating encapsulant includes a first portion sandwiched in between the first semiconductor die and the second semiconductor die, the first portion has a first recessed part adjacent to an edge of the first semiconductor die, and a second recessed part adjacent to an edge of the second semiconductor die. The redistribution layer is disposed on and electrically connected to the first semiconductor die and the second semiconductor die.

A power package includes a power substrate; one or more power devices arranged on the power substrate; an assembly having a top surface, first sides, and second sides; power contacts; and signal contacts. Additionally, the signal contacts are configured on the top surface, in the top surface, and/or to extend from the top surface. Furthermore, the signal contacts are arranged in a middle section of the top surface between the second sides.