A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

A semiconductor package includes at least one semiconductor element, an encapsulant, a first circuitry, a second circuitry and at least one first stud bump. The encapsulant covers at least a portion of the semiconductor element. The encapsulant has a first surface and a second surface opposite to the first surface. The first circuitry is disposed adjacent to the first surface of the encapsulant. The second circuitry is disposed adjacent to the second surface of the encapsulant. The first stud bump is disposed in the encapsulant, and electrically connects the first circuitry and the second circuitry. The first stud bump contacts the second circuitry directly.

A semiconductor package includes at least one semiconductor element, an encapsulant, a first circuitry, a second circuitry and at least one first stud bump. The encapsulant covers at least a portion of the semiconductor element. The encapsulant has a first surface and a second surface opposite to the first surface. The first circuitry is disposed adjacent to the first surface of the encapsulant. The second circuitry is disposed adjacent to the second surface of the encapsulant. The first stud bump is disposed in the encapsulant, and electrically connects the first circuitry and the second circuitry. The first stud bump contacts the second circuitry directly.

An integrated circuit includes a substrate, a pad electrode disposed on the substrate, and a passivation layer disposed on the pad electrode and including an organic insulating material. The integrated circuit further includes a bump electrode disposed on the passivation layer and connected to the pad electrode through a contact hole. The passivation layer includes an insulating portion having a first thickness and covering an adjacent edge region of the pad electrode and the substrate, and a bump portion having a second thickness, that is greater than the first thickness, and covering a center portion of the pad electrode.

An integrated circuit includes a substrate, a pad electrode disposed on the substrate, and a passivation layer disposed on the pad electrode and including an organic insulating material. The integrated circuit further includes a bump electrode disposed on the passivation layer and connected to the pad electrode through a contact hole. The passivation layer includes an insulating portion having a first thickness and covering an adjacent edge region of the pad electrode and the substrate, and a bump portion having a second thickness, that is greater than the first thickness, and covering a center portion of the pad electrode.

A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

A semiconductor chip, a display device or an electronic device includes a substrate, one or more conductive pads disposed on the substrate, and one or more bumps electrically connected to the one or more conductive pads, in which the one or more bumps includes a metal core, a polymer layer disposed over a surface of the metal core, and a conductive coating layer disposed over a surface of the polymer layer and electrically connected to the one or more conductive pads.

A semiconductor chip, a display device or an electronic device includes a substrate, one or more conductive pads disposed on the substrate, and one or more bumps electrically connected to the one or more conductive pads, in which the one or more bumps includes a metal core, a polymer layer disposed over a surface of the metal core, and a conductive coating layer disposed over a surface of the polymer layer and electrically connected to the one or more conductive pads.

An exemplary embodiment provides a driving circuit chip including: a substrate; a terminal electrode disposed on the substrate; and an electrode pad disposed on the terminal electrode, wherein the electrode pad includes: a bump structure protruded from the substrate to include a short side and a long side; and a bump electrode disposed on the bump structure and connected with the terminal electrode around a short edge portion of the bump structure, wherein the bump electrode is disposed to not cover at least a part of a long edge portion of the bump structure.