Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/10
Bump connectors; Manufacturing methods related thereto
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H01L2224/12
Structure, shape, material or disposition of the bump connectors prior to the connecting process
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H01L2224/13
of an individual bump connector
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H01L2224/13698
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13999
Shape or distribution of the fillers
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H01L2224/13999

Substrate, semiconductor device, and manufacturing method of substrate
10332752 · 2019-06-25 · ·

A substrate includes a support layer, a column-shaped first bump, and a second bump. The support layer has a main surface. The first bump is filled with a first conductive metal and also has a first upper surface and a side surface. The second bump includes a plurality of fine particles formed of a second conductive metal and also has a third portion configured to cover the first upper surface and a fourth portion configured to cover a part of the side surface. The first bump is disposed on the main surface, or the first bump is connected to an electrode disposed on the main surface. The second bump has a convex second upper surface. A height of the fourth portion in a direction perpendicular to the first upper surface is smaller than that of the first bump.

SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SUBSTRATE
20180076050 · 2018-03-15 · ·

A substrate includes a support layer, a column-shaped first bump, and a second bump. The support layer has a main surface. The first bump is filled with a first conductive metal and also has a first upper surface and a side surface. The second bump includes a plurality of fine particles formed of a second conductive metal and also has a third portion configured to cover the first upper surface and a fourth portion configured to cover a part of the side surface. The first bump is disposed on the main surface, or the first bump is connected to an electrode disposed on the main surface. The second bump has a convex second upper surface. A height of the fourth portion in a direction perpendicular to the first upper surface is smaller than that of the first bump.

FLUX AGENT AND SEMICONDUCTOR PACKAGE INCLUDING CURED PRODUCT THEREOF
20250282908 · 2025-09-11 ·

Provided is a flux agent according to embodiments of the inventive concept, wherein the flux agent includes a first compound including an ester group and an epoxy group, a fourth compound which is a chemical reactant of a second compound including an epoxy group and a third compound including an amine group and a carboxyl group, and a photoinitiator, wherein the content of the first compound is 50 wt % to 60 wt % based on 95 wt % of the total agent, the content of the fourth compound is 3 wt % to 33 wt % based on 100 wt % of the total agent, and the content of the photoinitiator is 2 wt % to 10 wt % based on 100 wt % of the total agent.