A manufacturing method of a chip package includes the following steps. A patterned solder paste layer is printed on a patterned conductive layer of a wafer. Plural solder balls are disposed on the solder paste layer that is on a first portion of the conductive layer. A reflow process is performed on the solder balls and the solder paste layer. A flux layer converted from a surface of the solder paste layer is cleaned.

An integrated circuit package may be fabricated by disposing an underfill material between an electronic substrate and an integrated circuit device through an opening in the electronic substrate. In one embodiment, an integrated circuit assembly may include an electronic substrate having a first surface and an opposing second surface, wherein the electronic substrate includes at least one opening extending from the first surface to the second surface. The integrated circuit assembly may further include an integrated circuit device, wherein the integrated circuit device is electrically attached to the electronic substrate with at least one interconnect, and an underfill material may be disposed between the first surface of the electronic substrate and the integrated circuit device, wherein a portion of the underfill material extends into the opening in the electronic substrate.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.