A semiconductor module includes: a switching device including a gate pad; an output unit including an output pad connected with the gate pad of the switching device through a wire and outputting a drive signal from the output pad to the switching device; a temperature protection circuit detecting temperature and performing protection operation; and a heat conduction pattern connected with the output pad, extending from the output pad toward the temperature protection circuit, and conducting heat generated at the switching device to the temperature protection circuit.

A semiconductor module includes: a switching device including a gate pad; an output unit including an output pad connected with the gate pad of the switching device through a wire and outputting a drive signal from the output pad to the switching device; a temperature protection circuit detecting temperature and performing protection operation; and a heat conduction pattern connected with the output pad, extending from the output pad toward the temperature protection circuit, and conducting heat generated at the switching device to the temperature protection circuit.

A method for manufacturing an electronic component includes preparing a mounting substrate provided with a first region to mount an electronic component thereon and a second region having conductivity, covering the second region with resin, applying a metal paste on the first region, mounting the electronic component on the first region with the metal paste, and removing the resin covering the second region. The mounting includes heating the mounting substrate to cure the metal paste with the electronic components being placed on the metal paste applied on the first region. The resin peeled from the second region by the heating is removed in the removing.

A method for manufacturing an electronic component includes preparing a mounting substrate provided with a first region to mount an electronic component thereon and a second region having conductivity, covering the second region with resin, applying a metal paste on the first region, mounting the electronic component on the first region with the metal paste, and removing the resin covering the second region. The mounting includes heating the mounting substrate to cure the metal paste with the electronic components being placed on the metal paste applied on the first region. The resin peeled from the second region by the heating is removed in the removing.

Some embodiments include apparatuses and methods of fabricating the apparatuses. One of the apparatuses includes a substrate of a semiconductor die; a memory cell portion located over a first portion of the substrate; a conductive pad portion located over a second portion of the substrate and outside the memory cell portion; and a sensor circuit including a portion located over the second portion of the substrate and under the conductive pad portion. The conductive pad portion includes conductive pads. Each of the conductive pads is part of a respective electrical path coupled to a conductive contact of a base outside the substrate.

Some embodiments include apparatuses and methods of fabricating the apparatuses. One of the apparatuses includes a substrate of a semiconductor die; a memory cell portion located over a first portion of the substrate; a conductive pad portion located over a second portion of the substrate and outside the memory cell portion; and a sensor circuit including a portion located over the second portion of the substrate and under the conductive pad portion. The conductive pad portion includes conductive pads. Each of the conductive pads is part of a respective electrical path coupled to a conductive contact of a base outside the substrate.

A semiconductor chip is arranged over a substrate in the form of a leadframe. A set of current-carrying formations configured as conductive ribbons are coupled to the semiconductor chip. The substrate does not include electrically conductive formations for electrically coupling the conductive ribbons to each other. Electrical contacts are formed via wedge bonding, for instance, between adjacent ones of the conductive ribbons so that a contact is provided between the adjacent ones of the conductive ribbons in support of a multi-formation current-carrying channel.

A semiconductor chip is arranged over a substrate in the form of a leadframe. A set of current-carrying formations configured as conductive ribbons are coupled to the semiconductor chip. The substrate does not include electrically conductive formations for electrically coupling the conductive ribbons to each other. Electrical contacts are formed via wedge bonding, for instance, between adjacent ones of the conductive ribbons so that a contact is provided between the adjacent ones of the conductive ribbons in support of a multi-formation current-carrying channel.

An electronic component package of an embodiment of the disclosure includes a base, a first plated layer, a first electronic component chip, a second plated layer, and a second electronic component chip. The base includes a first surface and a second surface. The first plated layer covers the first surface. The first electronic component chip is provided on the first plated layer with a first insulating layer being interposed therebetween. The second plated layer covers the second surface. The second electronic component chip is provided on the second plated layer with a second insulating layer being interposed therebetween. The first plated layer and the second plated layer each include a first metal material that is less likely to undergo an ion migration phenomenon than silver (Ag).

An electronic component package of an embodiment of the disclosure includes a base, a first plated layer, a first electronic component chip, a second plated layer, and a second electronic component chip. The base includes a first surface and a second surface. The first plated layer covers the first surface. The first electronic component chip is provided on the first plated layer with a first insulating layer being interposed therebetween. The second plated layer covers the second surface. The second electronic component chip is provided on the second plated layer with a second insulating layer being interposed therebetween. The first plated layer and the second plated layer each include a first metal material that is less likely to undergo an ion migration phenomenon than silver (Ag).