Apparatuses relating generally to a vertically integrated microelectronic package are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface. A first microelectronic device is coupled to the upper surface of the substrate. The first microelectronic device is a passive microelectronic device. First wire bond wires are coupled to and extend away from the upper surface of the substrate. Second wire bond wires are coupled to and extend away from an upper surface of the first microelectronic device. The second wire bond wires are shorter than the first wire bond wires. A second microelectronic device is coupled to upper ends of the first wire bond wires and the second wire bond wires. The second microelectronic device is located above the first microelectronic device and at least partially overlaps the first microelectronic device.

In one example, an electronic device includes a substrate including a substrate first side, a conductive structure, and a substrate sidewall on the substrate first side. The substrate sidewall forms a perimeter, the substrate first side within the perimeter defines a substrate base, and the substrate sidewall and the substrate base form a substrate cavity. An electronic component includes a component first side, a component second side, and a component lateral side. The electronic component is disposed over a first portion of the substrate base within the substrate cavity and is coupled to the conductive structure. An encapsulant encapsulates at least a portion of the component lateral side, and a lid is over at least a portion of the component first side. At least a portion of the component first side is devoid of the encapsulant. Other examples and related methods are also disclosed herein.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of CuAl IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.

A semiconductor package including a package substrate including a ground layer, a first segment of which is exposed to outside the package substrate, a semiconductor chip on the package substrate, and a functional layer including a conductive polymer and an adhesive polymer, covering the semiconductor chip, and being in contact with the first segment of the ground layer may be provided.

A semiconductor package including a package substrate including a ground layer, a first segment of which is exposed to outside the package substrate, a semiconductor chip on the package substrate, and a functional layer including a conductive polymer and an adhesive polymer, covering the semiconductor chip, and being in contact with the first segment of the ground layer may be provided.

A semiconductor package including a package substrate including a ground layer, a first segment of which is exposed to outside the package substrate, a semiconductor chip on the package substrate, and a functional layer including a conductive polymer and an adhesive polymer, covering the semiconductor chip, and being in contact with the first segment of the ground layer may be provided.

A semiconductor package including a package substrate including a ground layer, a first segment of which is exposed to outside the package substrate, a semiconductor chip on the package substrate, and a functional layer including a conductive polymer and an adhesive polymer, covering the semiconductor chip, and being in contact with the first segment of the ground layer may be provided.

The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

A printed circuit board is disclosed. The printed circuit board includes: a substrate layer; a copper layer disposed on the substrate layer; and an organic solderability preservative (OSP) layer disposed on the copper layer. The OSP layer defines one or more laser treated OSP surfaces.