The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 m in thickness.

A printed circuit board is disclosed. The printed circuit board includes: a substrate layer; a copper layer disposed on the substrate layer; and an organic solderability preservative (OSP) layer disposed on the copper layer. The OSP layer defines one or more laser treated OSP surfaces.

A printed circuit board is disclosed. The printed circuit board includes: a substrate layer; a copper layer disposed on the substrate layer; and an organic solderability preservative (OSP) layer disposed on the copper layer. The OSP layer defines one or more laser treated OSP surfaces.

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25 C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position.

Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)

R.sup.1-D-SiO.sub.3/2 (a-1)

[wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m-n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25 C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position.

Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)

R.sup.1-D-SiO.sub.3/2 (a-1)

[wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m-n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

According to one embodiment, a semiconductor device includes a wiring board, a controller chip that is provided on the wiring board and is sealed with a first resin composition, a nonvolatile memory chip that is provided on the first resin composition and is sealed with a second resin composition, a second bonding wire that connects a pad for electric power supply wiring of the controller chip to the wiring board and is sealed with the first resin composition, and a first bonding wire that connects a pad for signal wiring of the controller chip to the wiring board, is sealed with the first resin composition, and has a higher Pd content than that of the second bonding wire.

According to one embodiment, a semiconductor device includes a wiring board, a controller chip that is provided on the wiring board and is sealed with a first resin composition, a nonvolatile memory chip that is provided on the first resin composition and is sealed with a second resin composition, a second bonding wire that connects a pad for electric power supply wiring of the controller chip to the wiring board and is sealed with the first resin composition, and a first bonding wire that connects a pad for signal wiring of the controller chip to the wiring board, is sealed with the first resin composition, and has a higher Pd content than that of the second bonding wire.

A semiconductor apparatus of the present disclosure includes: a first semiconductor component in which a first circuit unit is provided; and a second semiconductor component in which a second circuit unit is provided and which is stacked to the first semiconductor component, and the second semiconductor component includes a capacitor unit as a decoupling capacitor having a first node and a second node that are connected to the first circuit unit.