The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.

A light-emitting device includes: a package defining a recess; a light-emitting element disposed on a bottom surface of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element. The sealing member includes a filler-containing layer which contains a filler and covers the light-emitting element, and a light-transmissive layer disposed on the filler-containing layer. The recess is further defined by a lateral surface having a stepped portion between the bottom surface of the recess and an opening of the recess. The light-transmissive layer covers the stepped portion. An upper surface of the light-transmissive layer is downwardly recessed.

A light-emitting device includes: a package defining a recess; a light-emitting element disposed on a bottom surface of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element. The sealing member includes a filler-containing layer which contains a filler and covers the light-emitting element, and a light-transmissive layer disposed on the filler-containing layer. The recess is further defined by a lateral surface having a stepped portion between the bottom surface of the recess and an opening of the recess. The light-transmissive layer covers the stepped portion. An upper surface of the light-transmissive layer is downwardly recessed.

A semiconductor package includes at least one semiconductor chip disposed in such a way that an active surface with chip pads faces a redistribution layer, vertical interconnectors extending in a vertical direction from the chip pads toward the redistribution layer, wherein each of the vertical connectors has a first end portion that is connected to a corresponding chip pad and a second end portion that is disposed on an opposite end of each vertical interconnector in relation to the first end portion, and a molding layer covering the semiconductor chip and the vertical interconnectors while exposing a surface of each of the second end portions of the vertical interconnectors, wherein the redistribution layer is formed over the molding layer, the redistribution layer having a redistribution land that is in contact with the surface of the second end portion, and wherein a width of the surface of the second end portion is greater than a width of an extension portion between the first end portion and the second end portion of each vertical interconnector.

A semiconductor package includes at least one semiconductor chip disposed in such a way that an active surface with chip pads faces a redistribution layer, vertical interconnectors extending in a vertical direction from the chip pads toward the redistribution layer, wherein each of the vertical connectors has a first end portion that is connected to a corresponding chip pad and a second end portion that is disposed on an opposite end of each vertical interconnector in relation to the first end portion, and a molding layer covering the semiconductor chip and the vertical interconnectors while exposing a surface of each of the second end portions of the vertical interconnectors, wherein the redistribution layer is formed over the molding layer, the redistribution layer having a redistribution land that is in contact with the surface of the second end portion, and wherein a width of the surface of the second end portion is greater than a width of an extension portion between the first end portion and the second end portion of each vertical interconnector.

An apparatus includes a package, a wall and a lid. The package may be configured to mount two chips configured to generate one or more signals in a millimeter-wave frequency range. The wall may be formed between the two chips. The wall generally has a plurality of conductive arches that attenuate an electromagnetic coupling between the two chips in the millimeter-wave frequency range. The lid may be configured to enclose the chips to form a cavity.

An apparatus includes a package, a wall and a lid. The package may be configured to mount two chips configured to generate one or more signals in a millimeter-wave frequency range. The wall may be formed between the two chips. The wall generally has a plurality of conductive arches that attenuate an electromagnetic coupling between the two chips in the millimeter-wave frequency range. The lid may be configured to enclose the chips to form a cavity.

A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.

An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.

A light-emitting device includes: a package defining a recess; a light-emitting element mounted on surface that defines a bottom of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element and made of a light-transmissive resin that contains a filler with an average particle diameter of 200 nm or more and 500 nm or less. The sealing member comprises a filler-containing layer, which contains the filler, and a light-transmissive layer that are layered in an order from a bottom side of the recess. The filler-containing layer has a thickness of equal to or larger than a height of the light-emitting element.