H01L2224/4562

BALL-BOND ARRANGEMENT

A ball-bond arrangement comprising a bond pad of a semiconductor device and a wire ball-bonded to the bond pad, wherein the wire extending from the bonded ball has a diameter of 15 to 50 m, and comprises a silver-based wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the coating layer is a double-layer comprised of a 1 to 40 nm thick inner layer of palladium or nickel and an adjacent 20 to 500 nm thick outer layer of gold, and wherein the surface of the bonded ball has a gold coverage of 70 to 100%.