The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25° C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position. Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)
R.sup.1-D-SiO.sub.3/2  (a-1) [wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m−n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic%) to an Ni concentration C.sub.Ni (atomic%), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

The invention relates to an electrical element having at least one functional region and a contact surface, wherein a connecting element is arranged on the contact surface, wherein the connecting element comprises a stranded wire coated with sintered material, wherein the stranded wire is connected, in particular sintered, to the contact surface by a sintered material. Furthermore, the invention relates to a method for producing the electrical element according to the invention.

The invention relates to an electrical element having at least one functional region and a contact surface, wherein a connecting element is arranged on the contact surface, wherein the connecting element comprises a stranded wire coated with sintered material, wherein the stranded wire is connected, in particular sintered, to the contact surface by a sintered material. Furthermore, the invention relates to a method for producing the electrical element according to the invention.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 μm to 350 μm bonding wire from the cast wire precursor by using a drawing die.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 μm to 350 μm bonding wire from the cast wire precursor by using a drawing die.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.