An imaging catheter assembly is provided. The imaging catheter assembly includes an interposer including a multi-layered substrate structure, wherein the multi-layered substrate structure includes a first plurality of conductive contact pads coupled to a second plurality of conductive contact pads via a plurality of conductive lines; an imaging component coupled to the interposer via the first plurality of conductive contact pads; and an electrical cable coupled to the interposer via the second plurality of conductive contact pads and in communication with the imaging component.

The present description concerns a support (108) for an electronic die (110), comprising: a first printed circuit board (300); a first conductive region (310), intended to receive the die, located on a first surface (108i) of the first board; and a second conductive region (320), intended to receive a thermal connector (200), located on a second surface (108s) of the first board, opposite to the first surface, the first region being connected to the second region by at least one through conductive via (330), located vertically in line with the first region.

A wiring substrate includes a substrate, a signal conductor, and a ground conductor. The substrate has a first surface and an opening provided in a first surface and being a mounting region for an electronic component. The signal conductor is on the first surface and extends in a first direction from the opening toward an outer edge of the substrate. The ground conductor is on the first surface and extends in the first direction, with the signal conductor being sandwiched between portions of the ground conductor. The signal conductor includes first, second and third sections in sequence in the first direction. The width of first section and the third section are wider than the second section. The ground conductor includes a protrusion extending toward the first section.

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

The disclosure provides a chip and a display module with the same. The chip comprises a body, wherein the body is provided with a plurality of junctions which are arranged at intervals in a first direction, at least one junction comprises a first sub junction and a second sub junction which are arranged in a second direction and formed into an integrated structure, a width of the first sub junction is greater than a width of the second sub junction in the first direction, and the second direction is perpendicular to the first direction.

A molded semiconductor package includes: semiconductor dies attached to a first side of a leadframe and electrically interconnected to form a power electronic circuit; a substrate attached to a second side of the leadframe opposite the first side, and including a metal body and electrically insulative material that separates the metal body from the leadframe; and a molding compound encapsulating the dies. The metal body includes a first surface in contact with the electrically insulative material, a second surface opposite the first surface and which is not covered by the molding compound, and a bevelled edge extending between the first and second surfaces. The bevelled edge of the metal body has a first sloped side face that extends from the first surface to an apex of the bevelled edge, and a second sloped side face that extends from the apex to the second surface. Methods of producing the package are also described.

An object of the present disclosure is to provide a method of manufacturing a semiconductor device capable of suppressing an electrostatic breakdown in a configuration including a semiconductor element with a sense cell part. A method of manufacturing a semiconductor device according to the present disclosure includes: bonding each of semiconductor elements 1 and a relay substrate on a conductor plate; connecting each of signal pads of each of the semiconductor elements and each of control pads of the relay substrate by a wire; bonding a first electrode material on each of the semiconductor elements; bonding a second electrode material on the relay substrate; sealing the conductor plate, each of the semiconductor elements, the relay substrate, the first electrode material, and the second electrode material by a sealing resin; and grinding the sealing resin and removing the shorting part to expose part of the second electrode material.

A semiconductor package includes a package substrate, a processor chip mounted on a first region of the package substrate, a plurality of memory chips mounted on a second region of the package substrate being spaced apart from the first region of the package substrate, a signal transmission device mounted on a third region of the package substrate between the first and second regions of the package substrate, and a plurality of first bonding wires connecting the plurality of memory chips to the signal transmission device. The signal transmission device includes upper pads connected to the plurality of first bonding wires, penetrating electrodes arranged in a main body portion of the signal transmission device and connected to the upper pads, and lower pads in a lower surface portion of the signal transmission device and connected to the penetrating electrodes and connected to the package substrate via bonding balls.

A semiconductor package includes: a redistribution substrate; a frame including first and second vertical connection conductors, and having a through-hole; first and second semiconductor chips; an encapsulant; a second redistribution structure disposed on the encapsulant, a conductive wire electrically connecting the second semiconductor chip and the second vertical connection conductor; and a vertical connection via penetrating a portion of the encapsulant, and electrically connecting the second redistribution structure and the first vertical connection conductor. The first semiconductor chip is connected to the second vertical connection conductor by the first redistribution structure.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a carrier, a first encapsulant, and an interposer. The first encapsulant is on the carrier and defines a cavity. The interposer is disposed between the first encapsulant and the cavity. The first encapsulant covers a portion of the interposer.