A semiconductor module arrangement includes a housing and at least one pair of semiconductor substrates arranged inside the housing. Each pair of semiconductor substrates includes first and second semiconductor substrates. The first semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The second semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The third metallization layer of the first semiconductor substrate is electrically coupled to a first electrical potential, and the third metallization layer of the second semiconductor substrate is electrically coupled to a second electrical potential that is opposite to the first electrical potential.

A semiconductor module arrangement includes a housing and at least one pair of semiconductor substrates arranged inside the housing. Each pair of semiconductor substrates includes first and second semiconductor substrates. The first semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The second semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The third metallization layer of the first semiconductor substrate is electrically coupled to a first electrical potential, and the third metallization layer of the second semiconductor substrate is electrically coupled to a second electrical potential that is opposite to the first electrical potential.

A substrate includes: (1) a first patterned conductive layer, the first patterned conductive layer including a pair of first transmission lines adjacent to each other; and (2) a first reference layer above the pair of first transmission lines, the first reference layer defining an opening, wherein the pair of first transmission lines are exposed to the opening.

A method of manufacturing a semiconductor integrated circuit includes a first ion implantation process implanting impurity ions of a second conductivity type into a bottom surface of a semiconductor substrate by adjusting an acceleration voltage and a projection range for forming a first current suppression layer, and a second ion implantation process implanting impurity ions of a first conductivity type into the bottom surface of the semiconductor substrate by adjusting an acceleration voltage and a projection range for forming a second current suppression layer. The semiconductor integrated circuit includes a first well region of the first conductivity type and a second well region of the second conductivity type provided in an upper portion of the first well region. The first current suppression layer is separated from the first well region and the second current suppression layer is provided under the first current suppression layer.

A semiconductor module according to the present disclosure includes: an insulating substrate; a first conductor disposed on the insulating substrate; a second conductor disposed on the insulating substrate; a first semiconductor element disposed on the first conductor; a second semiconductor element disposed on the second conductor; a first busbar connected to the first conductor in a region between the first semiconductor element and the second semiconductor element; a second busbar connected to the second semiconductor element; and an output busbar connecting the first semiconductor element to the second conductor and connected to the second conductor in the region between the first semiconductor element and the second semiconductor element. The output busbar is disposed at least partially overlapping the first busbar, and in an overlap region between the output busbar and the first busbar, the output busbar is located above the first busbar.

A substrate includes a first metal layer, a second metal layer, a third metal layer and an insulation layer surrounding the first metal layer, the second metal layer and the third metal layer. The first power component is electrically connected to the first metal layer. The second power component is electrically connected to the second metal layer. The shortest distance between the first metal layer exposed to a second surface of the insulation layer and the second metal layer exposed to the second surface is a first distance, the shortest distance between a first metal layer of the insulation layer exposed to the first surface and the second metal layer exposed to the first surface is a second distance, and a ratio value of the first distance to the second distance ranges between 1.25 and 1.4.

In one example embodiment, a PCBA, an optoelectronic module, an electrical coupling, and/or a high speed interconnect may include a first contact pad, a second contact pad adjacent to and spaced apart from the first contact pad, a first wire coupled to the first contact pad via a first ball bump, and a second wire coupled to the second contact pad via a double ball bump.

A method for producing a semiconductor module, involving the steps: providing a carrier plate and a substrate having a bonding layer arranged on a surface of the carrier plate or the substrate, applying adhesive in multiple adhesive areas of the carrier plate or the substrate which are free from the bonding layer, positioning the substrate on the carrier plate such that the substrate and the carrier plate are in contact with the bonding layer and the adhesive, and joining the substrate and the carrier plate across the bonding layer by melting or sintering of the bonding layer.

A semiconductor integrated circuit includes: a first well region of a first conductivity type; a second well region of a second conductivity type provided in an upper portion of the first well region; a first current suppression layer of a second conductivity type being provided to be separated from the first well region in a lower portion of a base-body of the second conductivity type directly under the first well region and having an impurity concentration higher than that of the base-body; and a second current suppression layer of the first conductivity type provided under the first current suppression layer so as to be exposed from a bottom surface of the base-body.

Apparatus and methods for electrical overstress (EOS) protection circuits are provided herein. In certain configurations, an EOS protection circuit includes an overstress sensing circuit electrically connected between a pad and a first supply node, an impedance element electrically connected between the pad and a signal node, a controllable clamp electrically connected between the signal node and the first supply node and selectively activatable by the overstress sensing circuit, and an overshoot limiting circuit electrically connected between the signal node and a second supply node. The overstress sensing circuit activates the controllable clamp when an EOS event is detected at the pad. Thus, the EOS protection circuit is arranged to divert charge associated with the EOS event away from the signal node to provide EOS protection.