A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

In a described example, an apparatus includes: a package substrate having a die mount portion and lead portions spaced from the die mount portion; a semiconductor die over the die mount portion having bond pads on an active surface facing away from the package substrate; non-gold bond wires forming electrical connections between at least one of the bond pads and one of the lead portions of the package substrate; a bond stitch on bump connection formed between one of the non-gold bond wires and a bond pad of the semiconductor die, comprising a stitch bond formed on a flex stud bump; and dielectric material covering a portion of the package substrate, the semiconductor die, the non-gold bond wires, the stitch bond and the flex stud bump, forming a packaged semiconductor device.

A lead-frame assembly is disclosed, for a semiconductor die and comprising a die attach pad and a plurality of elongate leads spaced apart therefrom; wherein each elongate lead has a first proximal end portion, a second distal end portion and a middle portion therebetween; wherein the die attach pad and each of the plurality of elongate leads each comprise a coating-free portion, and a coated portion having a coating material thereon; wherein a part of a perimeter of the die attach pad proximal each lead is comprised in the coating-free portion, and wherein the proximal end portion of each elongate lead is comprised in the coating-free portion. Associated package assemblies and methods are also disclosed.

A microelectronic device has a first die attached to a first die pad, and a second die attached to a second die pad. A magnetically permeable member is attached to a first coupler pad and a second coupler pad. A coupler component is attached to the magnetically permeable member. The first die pad, the second die pad, the first coupler pad, the second coupler pad, and the magnetically permeable member are electrically conductive. The first coupler pad is electrically isolated from the first die, from the second coupler pad, and from external leads of the microelectronic device. The second coupler pad is electrically isolated from the first die and from the external leads. The first die and the second die are electrically coupled to the coupler component. A package structure contains at least portions of the components of the microelectronic device and extends to the external leads.

A microelectronic device has a first die attached to a first die pad, and a second die attached to a second die pad. A magnetically permeable member is attached to a first coupler pad and a second coupler pad. A coupler component is attached to the magnetically permeable member. The first die pad, the second die pad, the first coupler pad, the second coupler pad, and the magnetically permeable member are electrically conductive. The first coupler pad is electrically isolated from the first die, from the second coupler pad, and from external leads of the microelectronic device. The second coupler pad is electrically isolated from the first die and from the external leads. The first die and the second die are electrically coupled to the coupler component. A package structure contains at least portions of the components of the microelectronic device and extends to the external leads.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

A multi-chip module (MCM) package includes a leadframe including half-etched lead terminals including a full-thickness and half-etched portion, and second lead terminals including a thermal pad(s). A first die is attached by a dielectric die attach material to the half-etched lead terminals. The first die includes first bond pads coupled to first circuitry configured for receiving a control signal and for outputting a coded signal and a transmitter. The second die includes second bond pads coupled to second circuitry configured for a receiver with a gate driver. The second die is attached by a conductive die attach material to the thermal pad. Bond wires include die-to-die bond wires between a portion of the first and second bond pads. A high-voltage isolation device is between the transmitter and receiver. A mold compound encapsulates the first and the second die.

A semiconductor apparatus includes: a first semiconductor chip; a resin enclosure having a space in which the first semiconductor chip is positioned; a lead terminal disposed in the resin enclosure; a second semiconductor chip configured to: control the first semiconductor chip, and be disposed on a first portion of the resin enclosure, the resin enclosure not overlapping with the lead terminal, as seen in planar view from a direction perpendicular to a top surface of the lead terminal; and a wire having a first end connected to the lead terminal and a second end connected to the second semiconductor chip.

The sensor semiconductor package (100) comprises a die pad (101), external connection terminals (103), semiconductor chip 105 and sealing member. The semiconductor chip (105) is located on a top surface of the die pad (101) and is electrically connected with the external connection terminals (103) and the die pad (101). The sealing member covers the die pad (101), the external connection terminals (103) and the semiconductor chip (105) and exposes an outer terminal (115) of each of the external connection terminals (103) and an outer contact surface (117) of the die pad (101). The outer contact surface (117) of the die pad (101) forms an electrode (117) of the sensor semiconductor package (100). The article comprises the sensor semiconductor package (100). The method manufactures the sensor semiconductor package (100) and the article.