A LED leadframe and a LED packaging structure adopting the same are provided. The LED leadframe includes an insulating substrate, a first electrode pad and a second electrode pad. The insulating substrate is formed with a bowl-shaped die bonding region and a strip-like insulating portion in the bowl-shaped die bonding region. The first and second electrode pads are fixed on the insulating substrate and disposed on a bottom of the die bonding region and whereby are separated by the strip-like insulating portion. The strip-like insulating portion has at least one bend. The structural design of the electrode pads of the LED leadframe makes a size of one of the electrode pads such as the positive electrode pad be available for a bonding machine to perform wire bonding or for placing a Zener diode chip and meanwhile makes the other electrode pad be as large as possible.

Provided is an aluminate fluorescent material having a high emission intensity and having a composition containing a first element that contains one or more of Ba and Sr, and a second element that contains Mg and Mn. In the composition, when a molar ratio of Al is 10, a total molar ratio of the first element is a parameter a, a total molar ratio of the second element is a parameter b, a molar ratio of Sr is a product of a parameter m and the parameter a, a molar ratio of Mn is a product of a parameter n and the parameter b. The parameters a and b satisfy 0.5<b<a≦0.5b+0.5<1.0, the parameter m satisfies 0≦m≦1.0, and the parameter n satisfies 0.4≦n≦0.7.

A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

A light-emitting device includes: a package defining a recess; a light-emitting element disposed on a bottom surface of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element. The sealing member includes a filler-containing layer which contains a filler and covers the light-emitting element, and a light-transmissive layer disposed on the filler-containing layer. The recess is further defined by a lateral surface having a stepped portion between the bottom surface of the recess and an opening of the recess. The light-transmissive layer covers the stepped portion. An upper surface of the light-transmissive layer is downwardly recessed.

A magnetic sensor includes a semiconductor element, a lead frame, a bonding wire, and a package. The lead frame includes a die pad to which the semiconductor element is attached and an external connection lead. The bonding wire connects the external connection lead with the semiconductor element. The package seals the semiconductor element, the die pad, the external connection pad, and the bonding wire. The package is made of epoxy-based resin. The lead frame further includes a projecting portion extending from the die pad, the projecting portion is exposed from the package at a position different from a position of the external connection lead, and a partial surface of the projecting portion which contacts with the package is made of material having a higher ionization tendency than an ionization tendency of silver.

A magnetic sensor includes a semiconductor element, a lead frame, a bonding wire, and a package. The lead frame includes a die pad to which the semiconductor element is attached and an external connection lead. The bonding wire connects the external connection lead with the semiconductor element. The package seals the semiconductor element, the die pad, the external connection pad, and the bonding wire. The package is made of epoxy-based resin. The lead frame further includes a projecting portion extending from the die pad, the projecting portion is exposed from the package at a position different from a position of the external connection lead, and a partial surface of the projecting portion which contacts with the package is made of material having a higher ionization tendency than an ionization tendency of silver.

A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which Mg or Zn is doped, a nitride semiconductor stacked structure provided over the p-type back barrier layer, the nitride semiconductor stacked structure including an electron transit layer and an electron supply layer, a source electrode, a drain electrode and a gate electrode provided over the nitride semiconductor stacked structure, and a groove extending to the p-type back barrier layer.

A street lamp includes a light emitter that is disposed at a height of at least 5 m and at most 15 m above a road and emits white light to illuminate the road. The white light has: a correlated color temperature in a range from 5000 K to 6500 K; a chromaticity deviation in a range from −10 to +10; a scotopic/photopic (S/P) ratio of at least 2.0, the S/P ratio being a ratio of a scotopic luminous flux to a photopic luminous flux; and an average horizontal illuminance of at least 5 lx at an illumination area on the road illuminated with the white light.