A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards.

A semiconductor device includes a resin member, a die pad including a first surface on which a semiconductor chip is disposed and covered by the resin member, and a second surface opposite to the first surface and partially covered by the resin member such that a first portion of the second surface is exposed from the resin member, and a plurality of electrodes each separated from the die pad and including a first surface connected to the semiconductor chip and covered by the resin member, and a second surface partially covered by the resin member such that a second portion of the second surface is exposed from the resin member. The first portion of the die pad includes at least four sides, each of which is nonparallel to a side of the second portion of one of the electrodes that faces the side.

A current sensor package, comprises a current path and a sensing device. The sensing device is spaced from the current path, and the sensing device is configured for sensing a magnetic field generated by a current flowing through the current path. Further, the sensing device comprises a sensor element. The sensing device is electrically connected to a conductive trace. An encapsulant extends continuously between the current path and the sensing device.

Semiconductor device packages may include a die-attach pad and a semiconductor die supported above the die-attach pad. A spacer comprising an electrically conductive material may be supported above the semiconductor die or between the semiconductor die and the die-attach pad. A wire bond may extend from a bond pad on an active surface of the semiconductor die to the spacer. Another wire bond may extend from the spacer to a lead finger or the die-attach pad. An encapsulant material may encapsulate the semiconductor die, the spacer, the wire bond, the other wire bond, the die-attach pad, and a portion of any lead fingers.

In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure comprised of conductive or magnetic material at least partially surrounds the chip. The magnetic-field-shielding structure comprises a sidewall region that laterally surrounds the chip, an upper region extending upward from the sidewall region, and a lower region extending downward from the sidewall region. At least one of the upper region and/or lower region terminate at an opening over the chip.

Power semiconductor module, including a base plate with at least one substrate located on the base plate, wherein an electronic circuit is provided on the at least one substrate, wherein located on the at least one substrate are electrical connectors comprising a DC+ power terminal, a DC− power terminal and an AC power terminal and further a control connector, wherein the power semiconductor module is designed as a half-bridge module including a first amount of switching power semiconductor devices and a second amount of switching power semiconductor devices, wherein the base plate includes a contact area, a first device area and a second device area, wherein the contact area is positioned in a center of the base plate such, that the first device area is positioned at a first side of the contact area and that the second device area is positioned at a second side of the contact area, the second side being arranged opposite to the first side, wherein the DC+ power terminal, the DC− power terminal, the AC power terminal and the control connector are positioned in the contact area, wherein the first amount of switching power semiconductor devices is positioned in the first device area and wherein the second amount of switching power semiconductor devices is positioned in the second device area, wherein all the power semiconductor devices in the first device area are located in two parallel lines being aligned parallel to the width of the base plate and wherein all the power semiconductor devices in the second device area are located in two parallel lines being aligned parallel to the width of the base plate.

A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards.

A chip-package device includes a substrate, a first chip, a first conductive layer, first wirings, and second wirings. The substrate includes a first top surface and first connection pads disposed on the first top surface. The first chip is disposed on the first top surface, and the first chip includes a second top surface and second connection pads disposed on the second top surface. The first conductive layer is disposed on the second top surface. The first wirings connect the first connection pads and the first conductive layer, and the second wirings connect the second connection pads and another side of the first conductive layer. Each of the first wirings and each of the second wirings respectively connect opposite sides of the first conductive layer.

A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.

A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.