A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.

A method for forming a structure with a hole on a substrate is disclosed. The method may comprise: depositing a first structure on the substrate; etching a first part of the hole in the first structure; depositing a plug fill in the first part of the hole; depositing a second structure on top of the first structure; etching a second part of the hole substantially aligned with the first part of the hole in the second structure; and, etching the plug fill of the first part of the hole and thereby opening up the hole by dry etching. In this way 3-D NAND device may be provided.

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.

In one embodiment, a semiconductor manufacturing apparatus includes an electrostatic chuck that includes a base and a first electrode provided on the base and is configured to electrostatically adsorb a wafer on the first electrode. The apparatus further includes a measurement module configured to measure potential of the wafer. The apparatus further includes a controller configured to adjust potential of the base based on the potential of the wafer and to adjust potential of the first electrode based on the potential of the wafer or the base, when the potential of the wafer measured by the measurement module changes.

A method for manufacturing a semiconductor device includes providing a substrate structure having an action region and a gate structure having a gate dielectric layer, a gate, a hardmask. The method also includes forming a first dielectric layer on the gate structure, forming a second dielectric layer on the first dielectric layer, performing a surface treatment on the second dielectric layer so that the upper surface of the second dielectric layer is flush with the upper surface of the mask member, which has a first recess is in its middle portion, forming a third dielectric layer on the second dielectric layer covering the mask member and selectively etching the third dielectric layer and the second dielectric layer relative to the first dielectric layer and the hardmask to form an opening adjacent to the gate structure and exposing the first dielectric layer on sidewalls of the gate structure.

A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first fin structure, a second fin structure, and a third fin structure over the semiconductor substrate. The semiconductor device structure also includes a merged semiconductor element on the first fin structure and the second fin structure and an isolated semiconductor element on the third fin structure. The semiconductor device structure further includes an isolation feature over the semiconductor substrate and partially or completely surrounding the first fin structure, the second fin structure, and the third fin structure. A top surface of the first fin structure is below a top surface of the isolation feature, and a top surface of the third fin structure is above the top surface of the isolation feature.

A method includes etching a first region by plasma etching such that an upper surface of the first region is provided at a deeper position within a substrate than a second region; forming a deposit containing carbon on the substrate by forming plasma of a hydrocarbon gas inside a chamber of a plasma processing apparatus; and further etching the first region by plasma etching. In the forming of the plasma of the hydrocarbon gas, magnetic field distribution in which a horizontal component on an edge side of the substrate is larger than a horizontal component on a center of the substrate is formed by an electromagnet.