A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

A method for manufacturing a semiconductor device having a low-k carbon-containing dielectric layer includes: depositing a low-k carbon-containing dielectric material, which has a carbon content ranging from 16 atomic % to 23 atomic %, using a precursor mixture to form a carbon-containing dielectric layer having a k value ranging from 2.8 to 3.3 and a porosity ranging from 0.03% to 1.0%; forming the carbon-containing dielectric layer into a patterned carbon-containing dielectric layer having a recess therein by etching, the patterned carbon-containing dielectric layer having a porosity ranging from 1.0% to 2.0%; and filling the recess with an electrically conductive material to form an electrically conductive feature in the patterned carbon-containing dielectric layer.

A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include one or more patterned features separated by exposed regions of the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the hydrogen-containing precursor. Forming the plasma of the silicon-containing precursor and the hydrogen-containing precursor may be performed at a plasma power of less than or about 1,000 W. The methods may include depositing a silicon-containing material on the one or more patterned features along the substrate. The silicon-containing material may be deposited on the patterned features at a rate of at least 2:1 relative to deposition on the exposed regions of the substrate.

A substrate processing apparatus includes: a holding unit that holds a substrate; a liquid discharge unit; a first supply unit; a second supply unit; and a control unit that controls each unit. The liquid discharge unit discharges a processing liquid to the substrate held by the holding unit. The first supply unit supplies the processing liquid to the liquid discharge unit. The second supply unit supplies steam to the liquid discharge unit. The second supply unit includes: a steam generator that generates steam; a supply line; a stabilizing mechanism; a pressure gauge that measures a pressure of the steam flowing through the supply line; and a pressure adjustment mechanism. The control unit controls the pressure adjustment mechanism so that the pressure of the steam measured by the pressure gauge becomes a preset pressure.

A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.

A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the second dummy gate structure to form a first recess and a second recess in the first dielectric layer, respectively; forming a gate dielectric layer in the first recess and the second recess; forming a first work function layer over the gate dielectric layer in the first and the second recesses; removing the first work function layer from the first recess; converting a surface layer of the first work function layer in the second recess into an oxide; and forming a second work function layer in the first recess over the gate dielectric layer and in the second recess over the oxide.

A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R.sup.1 is an organic group containing an amino group. R.sup.2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R.sup.3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b≤2.

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  (1)

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

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