The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may further include a first type shallow trench formed on a passivation layer overlying a semiconductor substrate. The conductive redistribution layer is formed in the first type shallow trench. A polyimide layer may be formed between neighboring conductive redistribution layers should a plurality of the conductive redistribution layers are formed with or without the first type shallow trench formed for each of the plurality of conductive redistribution layers.

A bonding pad structure comprises a first dielectric layer, a first conductive island in a second dielectric layer over the first dielectric layer and a via array having a plurality of vias in a third dielectric layer over the first conductive island. The structure also comprises a plurality of second conductive islands in a fourth dielectric layer over the via array. The second conductive islands are each separated from one another by a dielectric material of the fourth dielectric layer and in contact with at least one via of the via array. The structure further comprises a substrate over the second conductive islands. The substrate has an opening defined therein that exposes at least one second conductive island. The structure additionally comprises a bonding pad over the substrate. The bonding pad is in contact with the at least one second conductive island through the opening in the substrate.

The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may further include a first type shallow trench formed on a passivation layer overlying a semiconductor substrate. The conductive redistribution layer is formed in the first type shallow trench. A polyimide layer may be formed between neighboring conductive redistribution layers should a plurality of the conductive redistribution layers are formed with or without the first type shallow trench formed for each of the plurality of conductive redistribution layers.

A method for fabricating a semiconductor device includes forming a conductive liner over a first landing pad in a first region and over a second landing pad in a second region. The method further includes depositing a first conductive material within first openings within a resist layer formed over the conductive liner. The first conductive material overfills to form a first pad and a first layer of a second pad. The method further includes depositing a second resist layer over the first conductive material, and patterning the second resist layer to form second openings exposing the first layer of the second pad without exposing the first pad. A second conductive material is deposited over the second layer of the second pad.

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

Provided is a semiconductor die including a substrate including a first surface and a second surface, interconnection lines on the first surface of the substrate, an interlayer insulating layer on the first surface of the substrate and the interconnection lines, a back passivation layer on the second surface of the substrate, through-vias penetrating the substrate, first conductive pads being in contact with some of the through-vias and on the second surface of the substrate, and second conductive pads being in contact with others of the through-vias and on the back passivation layer, each of the first conductive pads includes a first pad portion buried in the back passivation layer, a second pad portion protruding above the back passivation layer, a first barrier pattern on a bottom surface and side surfaces of the first pad portion, and a second barrier pattern between the first pad portion and the second pad portion.

A semiconductor device according to the present embodiment includes a substrate having a first semiconductor circuit provided thereon. First pads are located on the substrate. A first insulating layer is located on an outer side of each of the first pads. Second pads are respectively bonded to the first pads. A second insulating layer is located on an outer side of each of the second pads and is bonded to the first insulating layer. The first pads each include a first conductive material, and a first insulating material located on an inner side of the first conductive material on a bonding surface of the first pads and the second pads.

A semiconductor package includes a first semiconductor chip including a first semiconductor layer, a first through-electrode that penetrates through the first semiconductor layer, a first bonding pad connected to the first through-electrode, and a first insulating bonding layer, and a second semiconductor chip on the first semiconductor chip and including a second semiconductor layer, a second bonding pad bonded to the first bonding pad, and a second insulating bonding layer bonded to the first insulating bonding layer, wherein the first insulating bonding layer includes a first insulating material, the second insulating bonding layer includes a first insulating layer that forms a bonding interface with the first insulating bonding layer and a second insulating layer on the first insulating layer, the first insulating layer includes a second insulating material, different from the first insulating material, and the second insulating layer includes a third insulating material, different from the second insulating material.

A bonded assembly includes a first semiconductor die that includes first metallic bonding structures embedded within a first bonding-level dielectric layer, and a second semiconductor die that includes second metallic bonding structures embedded within a second bonding-level dielectric layer and bonded to the first metallic bonding structures by metal-to-metal bonding. One of the first metallic bonding structures a pad portion, and a via portion located between the pad portion and a first semiconductor device in the first semiconductor die, the via portion having second tapered sidewalls.

The present invention provides a semiconductor structure containing a hybrid bond contact, comprising a first hybrid bond contact located in a dielectric layer. The first hybrid bond contact is consisting of copper. A first top wiring layer is situated within the dielectric layer and below the first hybrid bond contact, wherein the first top wiring layer is made of aluminum. A first composite liner layer is positioned between the first hybrid bond contact and the first top wiring layer. From a cross-sectional view, the first composite liner layer encapsulates the sidewalls and bottom surface of the first hybrid bond contact. The first composite liner layer consists of a titanium layer, a titanium nitride layer, a tantalum nitride layer, and a tantalum layer.