An integrated circuit die includes a metal layer, a first passivation layer disposed above the metal layer, an aluminum containing redistribution layer disposed above the first passivation layer, an under bump metallization layer, and a redistribution layer plug. The redistribution layer plug is coupled to the metal layer and disposed in a via in the first passivation layer. The under bump metallization layer is coupled to the aluminum containing redistribution layer above the first passivation layer at a distance from the redistribution layer plug.

An integrated circuit die includes a metal layer, a first passivation layer disposed above the metal layer, an aluminum containing redistribution layer disposed above the first passivation layer, an under bump metallization layer, and a redistribution layer plug. The redistribution layer plug is coupled to the metal layer and disposed in a via in the first passivation layer. The under bump metallization layer is coupled to the aluminum containing redistribution layer above the first passivation layer at a distance from the redistribution layer plug.

A semiconductor substrate has a back side surface and a front side surface. Metallization levels are provide at the front side surface. Capacitive deep trench isolation structures extend completely through the semiconductor substrate from the front side surface to the back side surface. Each capacitive deep trench isolation structure includes a conductive region insulated from the semiconductor substrate by an insulating liner. The conductive regions at first ends of the plurality of capacitive deep trench isolation structures are electrically connected to a first metallization level by electrical contacts. A bonding pad structure is located at the back side surface of the semiconductor substrate in direct physical and electrical connection to the conductive regions at second ends of the capacitive deep trench isolation structures.

According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

An integrated circuit die includes a metal layer, a first passivation layer disposed above the metal layer, an aluminum containing redistribution layer disposed above the first passivation layer, an under bump metallization layer, and a redistribution layer plug. The redistribution layer plug is coupled to the metal layer and disposed in a via in the first passivation layer. The under bump metallization layer is coupled to the aluminum containing redistribution layer above the first passivation layer at a distance from the redistribution layer plug.

A semiconductor substrate has a back side surface and a front side surface. Metallization levels are provide at the front side surface. Capacitive deep trench isolation structures extend completely through the semiconductor substrate from the front side surface to the back side surface. Each capacitive deep trench isolation structure includes a conductive region insulated from the semiconductor substrate by an insulating liner. The conductive regions at first ends of the plurality of capacitive deep trench isolation structures are electrically connected to a first metallization level by electrical contacts. A bonding pad structure is located at the back side surface of the semiconductor substrate in direct physical and electrical connection to the conductive regions at second ends of the capacitive deep trench isolation structures.

In one embodiment, a semiconductor device includes one or more metallizations, such as, e.g., Cu-RDL metallizations, provided on a passivation layer over a dielectric layer. A via is provided through the passivation layer and the dielectric layer in the vicinity of the corners of the metallization. The via may be a dummy via without electrical connections to an active device and may be provided at a distance between approximately 1 micron (10.sup.6 m.) and approximately 10 micron (10.sup.5 m.) from each one of said converging sides landing on an underlying metal layer.

Methods for forming packaged semiconductor devices including backside power rails and packaged semiconductor devices formed by the same are disclosed. In an embodiment, a device includes a first integrated circuit device including a first transistor structure in a first device layer; a front-side interconnect structure on a front-side of the first device layer; and a backside interconnect structure on a backside of the first device layer, the backside interconnect structure including a first dielectric layer on the backside of the first device layer; and a first contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and a second integrated circuit device including a second transistor structure in a second device layer; and a first interconnect structure on the second device layer, the first interconnect structure being bonded to the front-side interconnect structure by dielectric-to-dielectric and metal-to-metal bonds.

An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.