Some embodiments relate to a bond pad structure of an integrated circuit (IC). The bond structure includes a bond pad and an intervening metal layer positioned below the bond pad. The intervening metal layer has a first face and a second face. A first via layer is in contact with the first face of intervening metal layer. The first via layer has a first via pattern. The bond structure also includes a second via layer in contact with the second face of the intervening metal layer. The second via layer has a second via pattern that is different than first via pattern. The second via pattern includes a first group of elongated vias extending in parallel with one another in a first direction and a second group of vias in between the first group of elongated vias. The second group of vias extend in a second direction orthogonal to the first direction.

A semiconductor apparatus includes a substrate, plural transistor groups disposed on the substrate, an insulating film, and a metal member. Each of the plural transistor groups includes plural unit transistors arranged in a first direction within a plane of a top surface of the substrate. The plural transistor groups are arranged in a second direction perpendicular to the first direction. The insulating film covers the plural unit transistors and includes at least one cavity. The metal member is disposed on the insulating film and is electrically connected to the plural unit transistors via the at least one cavity. A heat transfer path is formed by a metal in a region from each of the plural unit transistors to a top surface of the metal member. Thermal resistance values of the heat transfer paths are different from each other among the plural unit transistors.

A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating materialsuch as a low- dielectric materialat least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating materialsuch as a low-low- dielectric materialat least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

A semiconductor device includes a substrate, a power device, a protection circuit, a dielectric layer, a drain pad, a source pad, and a gate pad. The power device and the protection circuit are disposed on the substrate. The power device includes a drain electrode, a source electrode, and a gate electrode. The protection circuit has a first terminal electrically connected with the source pad and a second terminal electrically connected with the gate pad. The dielectric layer is disposed on the power device and the protection circuit. The drain pad, the source pad, and the gate pad are disposed on the dielectric layer and respectively electrically connected with the drain electrode, the source electrode, and the gate electrode. At least part of the protection circuit is disposed under the source pad, the gate pad, or the drain pad.

A semiconductor package structure includes a first semiconductor wafer including a first bonding pad. The semiconductor package structure also includes a second semiconductor wafer including a second bonding pad and a third bonding pad. The second bonding pad and the third bonding pad are bonded to the first bonding pad of the first semiconductor wafer. The semiconductor package structure further includes a first via penetrating through the second semiconductor wafer to physically contact the first bonding pad of the first semiconductor wafer. A portion of the first via is disposed between the second bonding pad and the third bonding pad.

The description relates to a semiconductor die having a stacking structure of silicon-metallic conductive layer-silicon, and the semiconductor die according to embodiments includes a stacking structure of first semiconductor layer-metallic conductive layer-second semiconductor layer, and first and second power semiconductor devices in the first semiconductor layer, in which the first power semiconductor device includes a first source bump and a first gate bump, first trench gate electrodes under the first source bump, and a first channel among the plurality of first trench gate electrodes, in which the second power semiconductor device includes a second source bump and a second gate bump, second trench gate electrodes under the second source bump, and a second channel among the plurality of second trench gate electrodes, and in which the metallic conductive layer includes a metal layer.

A semiconductor device which prevents a crack from occurring on a pad region is provided. The semiconductor device includes a lower pad, an upper pad which is formed above the lower pad, an insulation layer which is formed between the lower pad and the upper pad, a via net for electrically connecting the lower pad and the upper pad in the insulation layer, the via net having a net shape in which a unit grid is connected with its adjacent unit grids to form a net structure, and at least one via hole for electrically connecting the lower pad and the upper pad in the unit grid of the via net.

A semiconductor layer includes an opening, and in a joint surface between structures, a portion between a semiconductor layer and an opening in a direction in which the semiconductor layers are stacked together includes a plurality of conductor portions and an insulator portion located between the plurality of conductor portions in a direction orthogonal to the direction.