A method for forming a sensing device includes providing a first substrate. The first substrate has a first surface and a second surface opposite thereto. A sensing region is adjacent to the first surface. A temporary cover plate is provided on the second surface to cover the sensing region. The method also includes forming a redistribution layer on the second surface and electrically connected to the sensing region. The method further includes removing the temporary cover plate after the formation of the redistribution layer. The first substrate is bonded to a second substrate and a cover plate after the removal of the temporary cover plate so that the first substrate is positioned between the second substrate and the cover plate. In addition, the method includes filling an encapsulating layer between the second substrate and the cover plate to surround the first substrate.

A method for forming a sensing device includes providing a first substrate. The first substrate has a first surface and a second surface opposite thereto. A sensing region is adjacent to the first surface. A temporary cover plate is provided on the second surface to cover the sensing region. The method also includes forming a redistribution layer on the second surface and electrically connected to the sensing region. The method further includes removing the temporary cover plate after the formation of the redistribution layer. The first substrate is bonded to a second substrate and a cover plate after the removal of the temporary cover plate so that the first substrate is positioned between the second substrate and the cover plate. In addition, the method includes filling an encapsulating layer between the second substrate and the cover plate to surround the first substrate.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

Flux formulations and solder attachment during the fabrication of electronic device assemblies are described. One flux formation includes a flux component and a metal particle component, the metal particle component being present in an amount of from 5 to 35 volume percent of the flux formulation. In one feature of certain embodiments, the metal particle component includes solder particles. Other embodiments are described and claimed.

Flux formulations and solder attachment during the fabrication of electronic device assemblies are described. One flux formation includes a flux component and a metal particle component, the metal particle component being present in an amount of from 5 to 35 volume percent of the flux formulation. In one feature of certain embodiments, the metal particle component includes solder particles. Other embodiments are described and claimed.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

A chip package including a substrate is provided. The substrate has a first surface and a second surface opposite thereto. The substrate includes a sensing or device region which is adjacent to the first surface. A recess is in the substrate. The recess extends from the second surface towards the first surface, and vertically overlaps the sensing or device region. A redistribution layer is electrically connected to the sensing or device region, and extends from the second surface into the recess. A method of forming the chip package is also provided.

A chip package including a substrate is provided. The substrate has a first surface and a second surface opposite thereto. The substrate includes a sensing or device region which is adjacent to the first surface. A recess is in the substrate. The recess extends from the second surface towards the first surface, and vertically overlaps the sensing or device region. A redistribution layer is electrically connected to the sensing or device region, and extends from the second surface into the recess. A method of forming the chip package is also provided.