A semiconductor apparatus is provided. The semiconductor apparatus includes: a first circuit, including a first semiconductor substrate, a first group of circuit components formed on the first semiconductor substrate, and a first group of metal layers, wherein, the first group of circuit components are distributed to at least one circuit block, and traces for each circuit block are formed in at least some of the first group of metal layers; a second circuit, including a second semiconductor substrate, a second group of circuit components formed on the second semiconductor substrate, and a second group of metal layers, wherein, the second group of circuit components are distributed to at least one circuit block, and traces for each circuit block are formed in at least some of the second group of metal layers, and the first circuit and the second circuit being face-to-face stacked and bonded.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

A semiconductor package comprises a first redistribution layer including a first conductive pattern; a connection module on an upper surface of the first redistribution layer; a glass core extending around the connection module on the upper surface of the first redistribution layer; a through via extended in the glass core; a second insulating layer on the glass core, wherein a portion of the second insulating layer is in the through via; a second redistribution layer on an upper surface of the glass core, wherein the second redistribution layer includes a via pad; and a first semiconductor chip and a second semiconductor chip space apart from each other on an upper surface of the second redistribution layer, wherein the via pad is in contact with the through via, and wherein the first semiconductor chip and the second semiconductor chip are electrically connected to each other through the connection module.

A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter- K, and an electrical resistivity less than 100 micro-ohm-centimeters.

An integrated device comprising a die substrate comprising a porous portion; a plurality of through substrate vias extending through the porous portion of the die substrate; and a die interconnection portion coupled to the die substrate.

Novel tools and techniques are provided for implementing a semiconductor package or a chip package, and more particularly methods, systems, and apparatuses are provided for implementing a semiconductor package or a chip package including a one or more channel vias. In various embodiments, an apparatus includes a first layer comprising a channel; a first via extending though the first layer to a first surface of the channel; and a line connecting the first via to a pad. In some cases, the first surface is located at a bottom of the channel.

Embodiments of a microelectronic assembly may include a first integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and a third surface orthogonal to the first and second surfaces, the first IC die including a substrate with a microchannel, and a metallization stack with a conductive trace that is parallel to the first and second surfaces and exposed at the third surface; and a second IC die having a fourth surface, wherein the conductive trace exposed at the third surface of the first IC die is electrically coupled to the fourth surface of the second IC die by an interconnect.

A device includes a substrate that includes a first layer stack including multiple metal layers and multiple dielectric layers. A first metal layer includes contacts disposed in a first region and configured to electrically connect to a first IC device, via pads disposed in a second region, and traces electrically connected to the first contacts and to the via pads. One or more of the traces extend between a pair of the via pads. The substrate also includes a second layer stack disposed on the second region of the first metal layer. The second layer stack includes a dielectric layer and a second metal layer on the dielectric layer. The second metal layer defines second contacts configured to electrically connect to one or more second IC devices. The second layer stack also includes conductive vias extending between the via pads and the second contacts.