A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

An electronic device includes a structured metallization layer including a plurality of contact pads that are electrically isolated from one another, and a metal clip connected in a current shunt measurement arrangement with a semiconductor device, wherein the metal clip includes first, second and third landing pads, a first bridge span connected between the first and second landing pads, and second bridge span connected between the second and third landing pads, wherein the first, second third landing pads are respectively thermally conductively attached to first, second and third contact pads from the structured metallization layer, and wherein the second mounting pad is electrically floating.

An electronic device includes a structured metallization layer including a plurality of contact pads that are electrically isolated from one another, and a metal clip connected in a current shunt measurement arrangement with a semiconductor device, wherein the metal clip includes first, second and third landing pads, a first bridge span connected between the first and second landing pads, and second bridge span connected between the second and third landing pads, wherein the first, second third landing pads are respectively thermally conductively attached to first, second and third contact pads from the structured metallization layer, and wherein the second mounting pad is electrically floating.

A power module package is provided. The power module package includes an electronic assembly, a first terminal assembly and a second terminal assembly. The electronic assembly at least includes a substrate. The first terminal assembly includes a first power device terminal, and the second terminal assembly includes a second power device terminal. The first power device terminal and the second power device terminal respectively extend from different surfaces of the substrate to form a height difference therebetween. The first power device terminal includes a first contact section and a first non-contact section. The first contact section is directly connected to the substrate, and the first non-contact section is not in contact with the substrate. The substrate protrudes from the first contact section and extends to a position under the first non-contact section.

Various embodiments include a method for installing an electronic assembly having a die and a substrate with a reference plane. The method may include: providing a product carrier having recesses with varying dimensions different from one another; and arranging planar molded parts, joining materials, and the die on the product carrier. The die is in electrical contact with at least one planar molded part and at least one joining material. The method further includes forming functional elements from the planar molded parts and/or the die and the joining materials, the functional elements supporting the substrate and electrically contacting the reference plane.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

An object is to suppress the temperature rise of a semiconductor element due to the heat generation of a metal wire. A semiconductor device includes a printed circuit board including a first circuit pattern and a second circuit pattern, and a semiconductor element arranged on an upper surface of the first circuit pattern, in which, in the semiconductor element, a drain electrode is arranged on an upper surface thereof and a gate electrode and a source electrode are arranged on a lower surface thereof, the gate electrode and the source electrode are bonded to the upper surface of the first circuit pattern via a first bonding material, and the drain electrode is bonded to an upper surface of the second circuit pattern via a metal member connected to the upper surface of the semiconductor element.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

A semiconductor device includes: a first semiconductor chip including a junction-type FET; a second semiconductor chip including a MOSFET; and a junction-type FET adjustment resistor disposed between a gate electrode of the junction-type FET and a source electrode of the MOSFET. The junction type FET and the MOSFET are cascode-connected. The junction-type FET adjustment resistor includes a first resistance circuit for a switching on operation and a second resistance circuit for a switching off operation.

A semiconductor device includes a semiconductor chip including a semiconductor substrate with a top surface electrode deposited on a top surface of the semiconductor substrate. An insulating film selectively covers edges of a top surface of the top surface electrode, and a plating layer covers the top surface of the top surface electrode exposed to an opening of the insulating film. A metal wiring plate includes a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part. A solder part fills the groove so as to bond the plating layer and the bottom surface of the junction part together. A boundary between the insulating film and the plating layer is encompassed within the groove.