A semiconductor assembly is provided, that includes a semiconductor chip including an upper surface electrode and a lower surface electrode opposite to the upper surface electrode, a metallic wiring plate electrically connected to the semiconductor chip, and a soldering portion that bonds the upper surface electrode of the semiconductor chip to the metallic wiring plate by soldering, the semiconductor chip including a temperature detection portion, an anode wire for the temperature detection portion, and a first insulation layer that blocks the soldering portion and insulates the soldering portion from the anode wire. A deterioration detection method for a semiconductor module is provided, that includes a semiconductor assembly, the deterioration detection method including monitoring a temperature of a temperature detection portion disposed in a semiconductor chip, and detecting a temperature anomaly based on short circuit of an anode wire disposed in the semiconductor chip to detect deterioration of the semiconductor module.

A semiconductor device includes a semiconductor chip including a semiconductor substrate with a top surface electrode deposited on a top surface of the semiconductor substrate. An insulating film selectively covers edges of a top surface of the top surface electrode, and a plating layer covers the top surface of the top surface electrode exposed to an opening of the insulating film. A metal wiring plate includes a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part. A solder part fills the groove so as to bond the plating layer and the bottom surface of the junction part together. A boundary between the insulating film and the plating layer is encompassed within the groove.

Provided is an integrated electric power steering apparatus including a positive-side wiring pattern configured to connect a positive side of a power supply and a positive side of an inverter circuit and a negative-side wiring pattern configured to connect a negative side of the power supply and a negative side of the inverter circuit, in which one of the wiring patterns is formed on a central side of a wiring board and another of the wiring patterns is formed on an outer periphery side of the wiring board. A plurality of switching elements forming the inverter circuit are mounted between the positive-side wiring pattern and the negative-side wiring pattern formed on the wiring board.

A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.

A semiconductor device includes: a first semiconductor chip including a junction FET; a second semiconductor chip including a MOSFET; and a junction-type FET adjustment resistor disposed between a gate electrode of the junction-type FET and a source electrode of the MOSFET. The junction type FET and the MOSFET are cascode-connected. The junction FET adjustment resistor includes a first resistance circuit for a switching on operation and a second resistance circuit for a switching off operation.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A semiconductor device includes: an upper-surface electrode on an upper surface of a semiconductor element; a plated layer on an upper surface of the upper-surface electrode; gate runners penetrating the plated layer and formed to extend above the upper surface of the semiconductor element; and a metal connecting plate arranged above the plated layer and electrically connected to the upper-surface electrode, wherein the metal connecting plate has a joint portion parallel to the upper surface of the semiconductor element and has a rising portion at an end of the joint portion, the rising portion extending in a direction away from the semiconductor element, and in a plane parallel to the upper surface of the semiconductor element, a first distance, which is a shortest distance between the rising portion and the gate runner not intersecting the rising portion, is equal to or longer than 1 mm.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A semiconductor module includes a semiconductor chip arranged on a mounting board, and a wiring member electrically connected to the semiconductor chip. The wiring member includes a body portion elongated in the direction of a Y-axis, and one or more ridges protruding from a surface of a flat plate-shaped portion of the body portion and extending along the Y-axis.