A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer.

This disclosure relates to a radio frequency (RF) transmission line for high performance RF applications. The RF transmission line includes a bonding layer having a bonding surface and configured to receive an RF signal, a barrier layer proximate the bonding layer, a diffusion barrier layer proximate the bonding layer and configured to prevent contaminant from entering the bonding layer, and a conductive layer proximate the diffusion barrier layer. The diffusion barrier layer has a thickness that allows the received RF signal to penetrate the diffusion barrier layer to the conductive layer. The diffusion barrier layer can be a nickel layer.

An image sensor chip includes a substrate; an image sensor chip provided on the substrate; and an adhesive film provided between the image sensor chip and the substrate in a semi-cured state. A first width of the adhesive film is equal to a second width of the image sensor chip.

A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

This disclosure relates to a mobile device with a transmission line for a radio frequency (RF) signal. The transmission line includes a bonding layer having a bonding surface, a barrier layer proximate the bonding layer, a diffusion barrier layer proximate the barrier layer, and a conductive layer proximate the diffusion barrier layer. The barrier layer and the diffusion barrier layer are configured to prevent conductive material from the conductive layer from entering the bonding layer. The diffusion barrier layer has a thickness sufficiently small such that a radio frequency signal is allowed to penetrate the diffusion barrier layer and propagate in the conductive layer.

A semiconductor device includes a conductive substrate, first semiconductor elements and a first conductive member. The substrate includes an obverse surface facing in thickness direction. The first semiconductor elements, bonded to the obverse surface, have a switching function. The conductive member includes a first wiring extending in x direction orthogonal to thickness direction; a second wiring spaced from the first wiring in y direction orthogonal to thickness and x directions, extending in x direction; a third wiring connected to the first wiring and the second wiring, extending in y direction, and connected to the first semiconductor elements; a fourth wiring spaced from the third wiring in x direction, connected to the first wiring and the second wiring, and extending in y direction; and a fifth wiring between the first wiring and the second wiring in y direction and connected to the third wiring and the fourth wiring.

A fan-out semiconductor package includes: a core member having a first through-hole and including first and second wiring layer disposed on different levels; a first semiconductor chip disposed in the first through-hole; a second semiconductor chip disposed on the first semiconductor chip in the first through-hole so that a second inactive surface faces a first inactive surface; conductive wires disposed on the core member and a second active surface and electrically connecting second connection pads and the second wiring layer to each other; an encapsulant covering at least portions of the core member, the first semiconductor chip, the second semiconductor chip, and the conductive wires and filling at least portions of the first through-hole; and a connection member disposed on the core member and a first active surface and electrically connecting first connection pads and the first wiring layer to each other.

This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer.

A fan-out semiconductor package includes: a core member having a first through-hole and including first and second wiring layer disposed on different levels; a first semiconductor chip disposed in the first through-hole; a second semiconductor chip disposed on the first semiconductor chip in the first through-hole so that a second inactive surface faces a first inactive surface; conductive wires disposed on the core member and a second active surface and electrically connecting second connection pads and the second wiring layer to each other; an encapsulant covering at least portions of the core member, the first semiconductor chip, the second semiconductor chip, and the conductive wires and filling at least portions of the first through-hole; and a connection member disposed on the core member and a first active surface and electrically connecting first connection pads and the first wiring layer to each other.