An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

A multi-chip module (MCM) package includes a leadframe including half-etched lead terminals including a full-thickness and half-etched portion, and second lead terminals including a thermal pad(s). A first die is attached by a dielectric die attach material to the half-etched lead terminals. The first die includes first bond pads coupled to first circuitry configured for receiving a control signal and for outputting a coded signal and a transmitter. The second die includes second bond pads coupled to second circuitry configured for a receiver with a gate driver. The second die is attached by a conductive die attach material to the thermal pad. Bond wires include die-to-die bond wires between a portion of the first and second bond pads. A high-voltage isolation device is between the transmitter and receiver. A mold compound encapsulates the first and the second die.

Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k−1th semiconductor chip when k is 1.

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

An optoelectronic component includes a housing including a plastic material and a first lead frame section at least partly embedded in the plastic material, a first recess and a second recess, wherein a first upper section of an upper side of the first lead frame section is not covered by the plastic material in the first recess, a second upper section of the upper side of the first lead frame section is not covered by the plastic material in the second recess, the first recess and the second recess are separated from one another by a section of the plastic material, an optoelectronic semiconductor chip is arranged in the first recess, and no optoelectronic semiconductor chips is arranged in the second recess.

An optoelectronic component includes a housing including a plastic material and a first lead frame section at least partly embedded in the plastic material, a first recess and a second recess, wherein a first upper section of an upper side of the first lead frame section is not covered by the plastic material in the first recess, a second upper section of the upper side of the first lead frame section is not covered by the plastic material in the second recess, the first recess and the second recess are separated from one another by a section of the plastic material, an optoelectronic semiconductor chip is arranged in the first recess, and no optoelectronic semiconductor chips is arranged in the second recess.

A semiconductor device has wettable corner leads. A semiconductor die is mounted on a lead frame. Die bonding pads are electrically connected to leads of the lead frame. The die and electrical connections are encapsulated with a mold compound. The leads are exposed and flush with the corners of the device. The leads include dimples so that they are wettable, which facilitates inspection when the device is mounted on a circuit board or substrate.

A semiconductor device has wettable corner leads. A semiconductor die is mounted on a lead frame. Die bonding pads are electrically connected to leads of the lead frame. The die and electrical connections are encapsulated with a mold compound. The leads are exposed and flush with the corners of the device. The leads include dimples so that they are wettable, which facilitates inspection when the device is mounted on a circuit board or substrate.