In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

A semiconductor module includes a substrate, a semiconductor element, and a wire. The semiconductor element is joined onto the substrate and has a surface electrode. Both ends of the wire are bonded to the substrate such that the wire passes over the surface electrode of the semiconductor element. The wire is electrically connected to the surface electrode.

Package-On-Package (PoP) structures that includes stud bulbs is provided. According to an embodiment, a POP structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Package-On-Package (PoP) structures that includes stud bulbs is provided. According to an embodiment, a POP structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

A semiconductor device, includes: a substrate having an obverse surface facing in a thickness direction; a first lead having a loading surface facing a side same as a side the obverse surface faces as to the thickness direction and being fixed on the obverse surface; and a first semiconductor element arranged on the loading surface. A dimension of the substrate in a first direction orthogonal to the thickness direction is larger than a dimension of the substrate in a second direction orthogonal to the thickness direction and the first direction. The first lead includes a first region overlapped with the first semiconductor element as viewed in the thickness direction and a second region separated from the first semiconductor element as viewed in the thickness direction, and at least a part of the second region extends along the second direction.

A substrate support for a plasma chamber includes a base plate arranged along a plane, a first layer of an electrically insulating material arranged on the base plate along the plane, a plurality of heating elements arranged in the first layer along the plane, and a plurality of diodes arranged in respective cavities in the first layer. The plurality of diodes are connected in series to the plurality of heating elements, respectively. Each of the plurality of diodes includes a die of a semiconductor material arranged in a respective one of the cavities. The semiconductor material has a first coefficient of thermal expansion. A first side of the die is arranged on the first layer along the plane. A first terminal of the die is connected to a first electrical contact on the first layer.