Methods related to plating a through-wafer via of a gallium arsenide integrated circuit are disclosed. For example, to improve copper plating, a seed layer formed in the through-wafer vias can be modified to increase water affinity, rinsed to remove contaminants, and activated to facilitate copper deposition. Other methods related to metallizing a through wafer via in gallium arsenide integrated circuits are disclosed. Such methods can include copper plating a through wafer via of a gallium arsenide integrated circuit.

Methods related to plating a through-wafer via of a gallium arsenide integrated circuit are disclosed. For example, to improve copper plating, a seed layer formed in the through-wafer vias can be modified to increase water affinity, rinsed to remove contaminants, and activated to facilitate copper deposition. Other methods related to metallizing a through wafer via in gallium arsenide integrated circuits are disclosed. Such methods can include copper plating a through wafer via of a gallium arsenide integrated circuit.

A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.

A printed circuit board is disclosed. The printed circuit board includes: a substrate layer; a copper layer disposed on the substrate layer; and an organic solderability preservative (OSP) layer disposed on the copper layer. The OSP layer defines one or more laser treated OSP surfaces.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.

LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.