Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.

An electronic device includes a first electronic part, a second electronic part opposite the first electronic part, and a bonding portion between the first electronic part and the second electronic part. The bonding portion contains a solder containing a substance whose crystal structure reversibly changes in temperature rise and fall processes which accompany the operation of the electronic device or electronic equipment including the electronic device. A change in the crystal structure of the substance contained in the solder promotes recovery and recrystallization of the solder in the temperature rise and fall processes which accompany the operation of the electronic device or the electronic equipment. As a result, the coarsening of crystal grains in the solder is suppressed.

An electronic device includes a first electronic part, a second electronic part opposite the first electronic part, and a bonding portion between the first electronic part and the second electronic part. The bonding portion contains a solder containing a substance whose crystal structure reversibly changes in temperature rise and fall processes which accompany the operation of the electronic device or electronic equipment including the electronic device. A change in the crystal structure of the substance contained in the solder promotes recovery and recrystallization of the solder in the temperature rise and fall processes which accompany the operation of the electronic device or the electronic equipment. As a result, the coarsening of crystal grains in the solder is suppressed.

A chip package including a substrate is provided. A sensing region or device region of the substrate is electrically connected to a conducting pad. A first insulating layer is disposed on the substrate. A redistribution layer is disposed on the first insulating layer. A first portion and a second portion of the redistribution layer are electrically connected to the conducting pad. A second insulating layer conformally extends on the first insulating layer, and covers side surfaces of the first portion and the second portion. A protection layer is disposed on the second insulating layer. A portion of the second insulating layer is located between the protection layer and the first insulating layer. A method of forming the chip package is also provided.

A chip package including a substrate is provided. A sensing region or device region of the substrate is electrically connected to a conducting pad. A first insulating layer is disposed on the substrate. A redistribution layer is disposed on the first insulating layer. A first portion and a second portion of the redistribution layer are electrically connected to the conducting pad. A second insulating layer conformally extends on the first insulating layer, and covers side surfaces of the first portion and the second portion. A protection layer is disposed on the second insulating layer. A portion of the second insulating layer is located between the protection layer and the first insulating layer. A method of forming the chip package is also provided.

An electronic device includes a first electronic part, a second electronic part opposite the first electronic part, and a bonding portion between the first electronic part and the second electronic part. The bonding portion contains a solder containing a substance whose crystal structure reversibly changes in temperature rise and fall processes which accompany the operation of the electronic device or electronic equipment including the electronic device. A change in the crystal structure of the substance contained in the solder promotes recovery and recrystallization of the solder in the temperature rise and fall processes which accompany the operation of the electronic device or the electronic equipment. As a result, the coarsening of crystal grains in the solder is suppressed.