An apparatus for treating gaseous pollutants includes a gas inlet part, a first treatment unit, a second treatment unit and a non-mechanical flow-guiding device. The gas inlet part includes a gas inlet chamber and at least one guide pipe. The guide pipe communicates with the gas inlet chamber and guides an effluent stream from a semiconductor process to the gas inlet chamber. The first treatment unit is coupled to a bottom end of the gas inlet part and is configured to abate the effluent stream. The non-mechanical flow-guiding device is coupled to the first treatment unit. The flow-guiding device is configured to guide the effluent stream to move toward an opening. The second treatment unit is coupled to the flow-guiding device via the opening, receives the effluent stream from the first treatment unit and further abates the effluent stream.

The present disclosure provides a product removal apparatus, a treatment system, and a product removal method that can sufficiently remove the products deposited inside a vacuum pump and also suppress corrosion of the base material of the vacuum pump. The product removal apparatus of the present disclosure includes: a sensor for measuring the temperature of the inside of a vacuum pump, the thickness of a film of a product in a flow path in the vacuum pump, or the vibration frequency of the vacuum pump; a gas supplier for supplying a gas containing hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radicals to the vacuum pump; and a control device. The control device controls the gas supplier so that the supply of the gas to the vacuum pump is stopped depending on a rate of temperature increase calculated from the temperature measured by the sensor, the film thickness, or the vibration frequency.

The present inventive concept relates to a device for treating an exhaust gas, and more particularly, to a plasma device capable of, even when connected to a vacuum pump, extending a lifetime of an electrode of a plasma torch. In the plasma device according to the present inventive concept, since an orifice is installed in a connection unit for connection with a vacuum pump to prevent a decrease in pressure of the vacuum pump, a pressure of a plasma reaction unit including the plasma torch of the plasma device can be maintained similar to normal pressure, thereby reducing the wear of a tungsten electrode in the plasma torch to extend a lifetime of the electrode.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Apparatus and methods are disclosed. The apparatus comprises: an abatement chamber of an abatement apparatus which treats an effluent stream from a semiconductor processing tool to provide a combusted effluent stream having effluent particles; and a first atomiser located downstream of the abatement chamber, the first atomiser being configured to produce droplets having a droplet size based on a particle size of the effluent particles to be removed from the combusted effluent stream. In this way, the atomizer may produce droplets which combine with or adhere to the effluent particles which assists in the removal of the effluent particles from the combusted effluent stream.

A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

In an aspect, an electrochemical hydrogen isotope recycling apparatus for recycling a feedstream comprising a single isotope of hydrogen, comprising: an electrochemical recycling unit, the unit comprising an anode; a cathode; an isotope-treated, cation exchange membrane operatively disposed between the anode and cathode, the isotope-treated, cation exchange membrane having heavy water containing the isotope of hydrogen therein, the unit configured to receive the feedstream containing the single isotope of hydrogen; wherein the single isotope is deuterium or tritium and when the single isotope is deuterium, the heavy water comprises D.sub.2O and when the single isotope is tritium, the heavy water is T.sub.2O.