A method of laser processing a material to form a separated part. The method includes focusing a pulsed laser beam into a laser beam focal line, viewed along the beam propagation direction, directed into the material, the laser beam focal line generating an induced absorption within the material, the induced absorption producing a hole or fault line along the laser beam focal line within the material, and directing a defocused carbon dioxide (CO.sub.2) laser from a distal edge of the material over the plurality of holes to a proximal edge of the material.

Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm.sup.2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densitiese.g., a dislocation density below 10.sup.4 cm.sup.2 and an inclusion density below 10.sup.4 cm.sup.3 and/or a MV density below 10.sup.4 cm.sup.3.

A wipe includes a generally flat piece of material (10) made of paper, cloth or the like. The generally flat piece of material (10) is formed into a non-planar form having a three-dimensional shape, for example conical, for storage and dispensing.

A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.

Disclosed are systems, devices and methodologies for handling wafers in wafer processing operations through use of wafer carriers. In an example situation, a wafer carrier can be configured as a plate to allow bonding of a wafer thereto to provide support for the wafer during some processing operations. Upon completion of such operations, the processed wafer can be separated from the support plate so as to allow further processing. Various devices and methodologies related to such wafer carriers for efficient handling of wafers are disclosed.

Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

An adhesive patch and method of use thereof for forming a plurality of stackable items into a vertically stacked load are described. The method may include delivering an aligned stack of items positioned on a pallet for eventual transportation while minimizing the misalignment of the stackable items.

A phosphor wheel comprises a wavelength conversion portion. The wavelength conversion portion comprises a wavelength conversion material optically integrated with at least one convex surface.

A process for producing a base material for disks including forming a raw slurry material into a platy shape and drying the plate, the raw slurry material containing inorganic fibers which have a wet volume of about 300 mL/5 g or larger and which are amorphous or have a degree of crystallinity of about 50% or lower.